VUO52-18NO1

VUO52-18NO1 3~ Rectifier Standard Rectifier Module VRRM = 1800 V I DAV = 60 A I FSM = 350 A 3~ Rectifier Bridge Part number VUO52-18NO1 Backside: isolated 4/5 6 8 10 1/2 Features / Advantages: Applications: Package: V1-A-Pack ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219e VUO52-18NO1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.13 V 1.44 V 1.07 V IF = 20 A IF = 60 A IF = 20 A IF = 60 A TVJ = 125 °C 1.50 V T VJ = 150 °C 60 A TVJ = 150 °C 0.83 V 11.5 mΩ d=⅓ for power loss calculation only thermal resistance case to heatsink max. Unit 1900 V VR = 1800 V rectangular R thCH typ. VR = 1800 V TC = 110 °C Ptot min. 1.3 K/W 0.3 K/W TC = 25°C 95 W t = 10 ms; (50 Hz), sine TVJ = 45°C 350 A t = 8,3 ms; (60 Hz), sine VR = 0 V 380 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 320 A t = 10 ms; (50 Hz), sine TVJ = 45°C 615 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 600 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 450 A²s 425 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 10 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191219e VUO52-18NO1 Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 37 Weight MD 2 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute Date Code 2.5 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Prod. Index yywwA Part Number (Typ) Lot No.: Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Standard Ordering Number VUO52-18NO1 Similar Part VUO52-08NO1 VUO52-12NO1 VUO52-14NO1 VUO52-16NO1 Package V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack VUO52-20NO1 VUO52-22NO1 VUO34-16NO1 VUO34-18NO1 V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO52-18NO1 * on die level Delivery Mode Blister Code No. 516833 Voltage class 800 1200 1400 1600 2000 2200 1600 1800 T VJ = 150°C Rectifier V 0 max threshold voltage 0.83 V R0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 24 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219e VUO52-18NO1 3,6 ±0,5 Outlines V1-A-Pack 0,5 +0,2 35 26 63 31,6 2 max. 0,25 13 17 ±0,25 R2 52 (see 1) *7 *0 *7 *14 5,5 *14 Ø 6,1 Ø 2,5 1,5 12,2 11,75 ±0,3 = 11,75 ±0,3 = 1x45° 3 4 5 8 9 10 15 6 2 7 4 1 6 *11 5,5 *0 Ø 2,1 *11 6 0,5 *14 *0 25 *14 Marking on product Aufdruck der Typenbezeichnung 25 Ø 0,8 * 25,75 ±0,3 25,75 ±0,3 1 ±0,2 Remarks / Bemerkungen: 1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm 2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad 4. Detail X : EJOT PT® self-tapping screws (dimension K25) to be recommended for mounting on PCB  selbstschneidende Schraube (Größe K25) empfohlen für die PCB-Montage Take care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm Bei der Wahl der Schraubenlänge die PCB-Dicke und die maximale Lochtiefe von 6mm beachten Recommended mounting torque: 1.5 Nm / Empfohlenes Drehmoment: 1.5 Nm   4/5 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 6 8 10 2 +0,2 1/2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219e VUO52-18NO1 Rectifier 80 300 60 250 50 Hz 0.8 x V RRM 1000 VR = 0 V TVJ = 45°C IF 2 It IFSM TVJ = 45°C 200 40 [A] [A] TVJ = 125°C 150°C 20 2 [A s] TVJ = 130°C TVJ = 130°C 150 TVJ = 25°C 0 0.4 0.8 1.2 1.6 100 10-3 2.0 10-2 VF [V] 10-1 Ptot 10 t [ms] Fig. 3 I2t vs. time per diode Fig. 2 Surge overload current vs. time per diode 30 80 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 20 1 t [s] Fig. 1 Forward current vs. voltage drop per diode 25 100 100 DC = 0.6 KW 1 0.8 KW 15 1 KW 2 KW 4 KW 8 KW 0.4 IF(AV)M [A] [W] 0.5 60 0.33 0.17 40 0.08 10 20 5 0 0 0 5 10 15 20 25 0 25 50 75 100 125 0 150 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.6 Constants for ZthJC calculation: 1.2 ZthJC 0.8 [K/W] 0.4 i Rth (K/W) ti (s) 1 0.06070 0.008 2 0.173 0.05 3 0.3005 0.06 4 0.463 0.3 5 0.3028 0.15 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219e