VUO55-16NO7

VUO55-16NO7 3~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 60 A I FSM = 750 A 3~ Rectifier Bridge Part number VUO55-16NO7 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - Features / Advantages: Applications: Package: PWS-B ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Easy to mount with two screws ● Base plate: Aluminium internally DCB isolated ● Advanced power cycling Recommended replacement: VUO82-16NO7, VUO84-16NO7 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO55-16NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current VR = 1600 V TVJ = 25°C 100 µA VR = 1600 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.03 V 1.23 V 0.92 V VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case IF = 20 A IF = 60 A IF = 20 A IF = 60 A rectangular thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 1700 V V 1.18 V T VJ = 150 °C 60 A TVJ = 150 °C 0.76 V 6.9 mΩ d=⅓ for power loss calculation only R thCH typ. TVJ = 125 °C TC = 85 °C Ptot min. 2.7 K/W 0.4 K/W TC = 25°C 46 W t = 10 ms; (50 Hz), sine TVJ = 45°C 750 A t = 8,3 ms; (60 Hz), sine VR = 0 V 810 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 640 A t = 8,3 ms; (60 Hz), sine VR = 0 V 690 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2.82 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 2.73 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.05 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 1.98 kA²s 10 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191219b VUO55-16NO7 Package Ratings PWS-B Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 203 Weight MD mounting torque MT terminal torque d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Logo UL Product Number 4.25 5.75 Nm 2.5 3.5 Nm 11.0 mm 7.5 mm 3000 V 2500 V XXXX-XXXX yywwZ 1234 Ordering Standard Location Lot# Ordering Number VUO55-16NO7 Equivalent Circuits for Simulation V0 50/60 Hz, RMS; IISOL ≤ 1 mA g Circuit Diagram Date Code I typ. R0 Marking on Product VUO55-16NO7 * on die level Delivery Mode Box Code No. 456691 T VJ = 150°C Rectifier V 0 max threshold voltage 0.76 V R0 max slope resistance * 5.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO55-16NO7 Outlines PWS-B 9 M5 18 5.3 18 36 60 10 24 20 16 60 72 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO55-16NO7 Rectifier 100 50 Hz 0.8 x V RRM 3000 VR = 0 V 600 80 2500 60 IF 2000 500 IFSM [A] 40 2 TVJ = 45°C TVJ = 45°C It 1500 [A] 2 400 TVJ = 130°C [A s] 20 TVJ = 125°C 150°C TVJ = 130°C 1000 TVJ = 25°C 0 0.4 0.6 0.8 1.0 1.2 1.4 300 10-3 1.6 10-2 VF [V] 10-1 10 t [ms] Fig. 3 I2t vs. time per diode Fig. 2 Surge overload current vs. time per diode 24 Ptot 1 t [s] Fig. 1 Forward current vs. voltage drop per diode 60 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 18 500 100 DC = 0.6 KW 1 0.8 KW 12 1 KW 2 KW 4 KW 8 KW 0.5 0.4 40 IF(AV)M 0.33 0.17 [A] [W] 0.08 20 6 0 0 0 5 10 15 20 0 25 50 75 100 125 0 150 25 50 TA [°C] IF(AV)M [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 3.0 2.5 Constants for ZthJC calculation: 2.0 ZthJC 1.5 [K/W] 1.0 i Rth (K/W) ti (s) 1 0.040 0.010 2 0.150 0.030 3 0.610 1.350 4 1.900 14.00 0.5 0.0 1 10 100 1000 10000 100000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b