VUO 55
Three Phase Rectifier Bridge
IdAVM = 58 A VRRM = 1200-1800 V
VRSM V 1200 1400 1600 1800
VRRM V 1200 1400 1600 1800
Type
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VUO 55-12NO7 VUO 55-14NO7 VUO 55-16NO7 VUO 55-18NO7*
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* delivery time on request
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Symbol IdAVM IFSM
Test Conditions TC = 85°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 58 750 820 670 740 2800 2820 2250 2300 -40...+150 150 -40...+150 A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. Nm lb.in. g
Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873
q q q q q q
I2t
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s
Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors
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2500 3000 5 ± 15 % 44 ± 15 % 3 ± 15 % 26 ± 15 % 260
Mounting torque (M5) Terminal connection torque (M5)
Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling
q q q
Dimensions in mm (1 mm = 0.0394")
Weight
typ.
Symbol IR VF VT0 rT RthJC RthJH
Test Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C
Characteristic Values £ £ £ 0.3 10.0 1.6 0.85 8 2.7 0.45 3.06 0.51 mA mA V V mW K/W K/W K/W K/W
For power-loss calculations only per diode; DC current per module per diode; DC current per module
Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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VUO 55
I2t
Fig. 1 Forward current versus voltage drop per diode
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
Fig. 3 I2t versus time (1-10 ms) per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at case temperature
Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.036 0.149 0.615 1.9 ti (s) 0.013 0.034 1.35 23.0
Constants for ZthJK calculation: i 1 2 3 4 5 Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved Rthi (K/W) 0.036 0.149 0.615 1.9 0.36 ti (s) 0.013 0.034 1.35 23.0 52.0
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