VUO64-16NO7

VUO64-16NO7 3~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 60 A I FSM = 550 A 3~ Rectifier Bridge Part number VUO64-16NO7 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - Features / Advantages: Applications: Package: PWS-D Flat ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Easy to mount with two screws ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO64-16NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1600 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.07 V 1.30 V 0.96 V IF = 20 A IF = 60 A IF = 20 A IF = 60 A TVJ = 125 °C 1.27 V T VJ = 150 °C 60 A TVJ = 150 °C 0.78 V 8.1 mΩ d=⅓ for power loss calculation only R thCH max. Unit 1700 V VR = 1600 V rectangular Ptot typ. VR = 1600 V TC = 120 °C I DAV min. 1.1 K/W 0.4 K/W TC = 25°C 110 W t = 10 ms; (50 Hz), sine TVJ = 45°C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 470 A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.52 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.48 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.11 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 1.06 kA²s 19 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220b VUO64-16NO7 Package Ratings PWS-D Flat Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 125 °C 118 Weight g MD mounting torque 4.25 5.75 Nm MT terminal torque 4.25 5.75 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Location Logo Date Code mm V 2500 V UL Ordering Number VUO64-16NO7 Similar Part VUO62-16NO7 Equivalent Circuits for Simulation V0 13.0 3000 Lot# Ordering Standard I mm Circuit Diagram yywwZ 1234 XXX XX-XXXXX Part Number 50/60 Hz, RMS; IISOL ≤ 1 mA 9.5 R0 Marking on Product VUO64-16NO7 Package PWS-D * on die level Delivery Mode Box Code No. 508503 Voltage class 1600 T VJ = 150°C Rectifier V 0 max threshold voltage 0.78 V R0 max slope resistance * 6.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO64-16NO7 Outlines PWS-D Flat 3 17 7 5 2,50 Max. allowed screw-in depth: 6 mm 20 20 17,5 C D A E 42 B 13,3 21,6 Ø 5,3 5,3 2,5 10 23 48 54 60 72 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO64-16NO7 Rectifier 500 100 50 Hz 0.8 x V RRM 10000 VR = 0 V 80 400 60 IF 2 IFSM It TVJ = 45°C TVJ = 45°C 1000 [A] [A] 40 2 [A s] TVJ = 150°C 300 TVJ = 150°C TVJ = 125°C 150°C 20 0 0.4 TVJ = 25°C 0.8 1.2 200 0.001 1.6 100 0.010 VF [V] Ptot 1 10 t [ms] 2 Fig. 3 I t vs. time per diode Fig. 2 Surge overload current vs. time per diode 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 20 1.000 t [s] Fig. 1 Forward current vs. voltage drop per diode 30 0.100 DC = 0.6 KW 0.8 KW [W] 1 KW 2 KW 4 KW 8 KW 0.5 0.4 60 0.33 IF(AV)M Graph 1* 10 1 80 [A] 0.17 0.08 40 20 0 0 0 10 20 0 25 50 75 100 125 150 175 0 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.2 Constants for ZthJC calculation: 0.8 ZthJC [K/W] 0.4 i Rth (K/W) ti (s) 1 0.05 0.001 2 0.14 0.030 3 0.25 0.060 4 0.35 0.130 5 0.31 0.920 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b