VUO80-18NO1

VUO 80 Three Phase Rectifier Bridge IdAVM = 82 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type 10 8 6 1/2 45 12 VUO 80-08NO1 VUO 80-12NO1 VUO 80-14NO1 VUO 80-16NO1 VUO 80-18NO1 4/5 6 8 10 Symbol IdAV IdAVM IFSM Test Conditions TK = 90°C, module module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 82 82 600 640 520 555 1800 1720 1350 1295 -40...+150 150 -40...+130 A A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. g Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop Leads suitable for PC board soldering UL registered E72873 q q q q q q q I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32UNF) q q q 3000 3600 2 - 2.5 18-22 35 Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Symbol IR VF VT0 rT RthJH dS dA a Test Conditions VR = VRRM VR = VRRM IF = 80 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C Characteristic Values £ £ £ 0.3 6 1.5 0.8 7.5 1.42 0.24 12.7 9.4 50 mA mA V V mW K/W K/W mm mm m/s2 For power-loss calculations only per diode, 120° rect. per module, 120° rect. Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 934 VUO 80 80 A 70 IF 60 50 40 30 20 500 104 50Hz, 80% VRRM A 400 IFSM 300 As 2 VR = 0 V TVJ = 45°C I2t TVJ = 45°C 103 TVJ=150°C TVJ= 25°C 200 TVJ = 150°C TVJ = 150°C 100 10 0 0.0 0 0.001 102 0.01 0.1 t s 1 1 2 3 4 5 6 7 8 910 ms t 0.5 1.0 VF 1.5 V 2.0 Fig. 1 Forward current versus voltage drop per diode 200 W 150 Ptot Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 100 A RthHA : 0.5 K/W 1.0 K/W 1.5K/W 2.0 K/W 3.0 K/W 4.0 K/W 6.0 K/W 80 Id(AV)M 60 100 40 50 20 0 0 10 20 30 40 50 60 70 Id(AV)M 80 A 0 20 40 60 80 100 120 140 °C Tamb 0 0 20 40 60 80 100 120 140 °C TH Fig. 4 Power dissipation versus direct output current and ambient temperature 1.6 K/W 1.4 ZthJH Fig. 5 Max. forward current versus heatsink temperature 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.001 VUO 80 Constants for ZthJH calculation: i 1 2 3 4 Rthi (K/W) 0.005 0.21 0.795 0.41 ti (s) 0.01 0.05 0.14 0.5 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 2-2