VUO84-16NO7

VUO84-16NO7 3~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 90 A I FSM = 750 A 3~ Rectifier Bridge Part number VUO84-16NO7 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - Features / Advantages: Applications: Package: PWS-D Flat ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Easy to mount with two screws ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO84-16NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current VR = 1600 V TVJ = 25°C 100 µA VR = 1600 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.08 V 1.35 V 0.99 V VF forward voltage drop IF = 30 A IF = 90 A IF = 30 A bridge output current IF = 90 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 1700 V V 1.33 V T VJ = 150 °C 90 A TVJ = 150 °C 0.78 V 6 mΩ d=⅓ for power loss calculation only Ptot typ. TVJ = 125 °C TC = 115 °C I DAV min. 0.9 K/W 0.4 K/W TC = 25°C 135 W t = 10 ms; (50 Hz), sine TVJ = 45°C 750 A t = 8,3 ms; (60 Hz), sine VR = 0 V 810 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 640 A t = 8,3 ms; (60 Hz), sine VR = 0 V 690 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2.82 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 2.73 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.05 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 1.98 kA²s 27 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220b VUO84-16NO7 Package Ratings PWS-D Flat Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 125 °C 118 Weight g MD mounting torque 4.25 5.75 Nm MT terminal torque 4.25 5.75 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Location Logo Date Code mm V 2500 V UL Ordering Number VUO84-16NO7 Similar Part VUO82-16NO7 Equivalent Circuits for Simulation V0 13.0 3000 Lot# Ordering Standard I mm Circuit Diagram yywwZ 1234 XXX XX-XXXXX Part Number 50/60 Hz, RMS; IISOL ≤ 1 mA 9.5 R0 Marking on Product VUO84-16NO7 Package PWS-D * on die level Delivery Mode Box Code No. 508510 Voltage class 1600 T VJ = 150°C Rectifier V 0 max threshold voltage 0.78 V R0 max slope resistance * 4.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO84-16NO7 Outlines PWS-D Flat 3 17 7 5 2,50 Max. allowed screw-in depth: 6 mm 20 20 17,5 C D A E 42 B 13,3 21,6 Ø 5,3 5,3 2,5 10 23 48 54 60 72 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO84-16NO7 Rectifier 120 50 Hz 0.8 x V RRM 600 100 10000 VR = 0 V TVJ = 45°C 80 2 500 IF It TVJ = 45°C 60 [A] TVJ = 150°C [A] TVJ = 125°C 150°C 20 0 0.4 300 TVJ = 25°C 0.8 1.2 100 0.001 1.6 0.010 0.100 1.000 1 10 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 40 2 120 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 30 Ptot 2 [A s] 400 40 TVJ = 150°C 1000 IFSM DC = 0.6 KW 100 0.8 KW 20 1 KW 2 KW 4 KW 8 KW 1 0.5 80 0.4 IF(AV)M 0.33 60 0.17 [A] [W] 0.08 40 10 20 0 0 0 10 20 30 0 25 50 75 100 125 150 0 175 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 1.0 Constants for ZthJC calculation: 0.8 ZthJC 0.6 [K/W] 0.4 0.2 i Rth (K/W) ti (s) 1 0.05 0.001 2 0.14 0.030 3 0.18 0.070 4 0.28 0.150 5 0.25 0.950 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b