VW2X60-12IO1

VW2x60-12io1 Thyristor Module VRRM = 1200 V I TAV = 27 A VT = 1.28 V AC Controlling 2~ full-controlled Part number VW2x60-12io1 Backside: isolated 1 2 7 5 6 4 9 10 Features / Advantages: Applications: Package: V1-A-Pack ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120d VW2x60-12io1 Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 100 µA 5 mA TVJ = 25°C 1.25 V 1.65 V 1.28 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I RMS RMS forward current per phase 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 85 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.75 V T VJ = 125 °C 27 A 60 A TVJ = 125 °C 0.85 V 11 mΩ 0.92 K/W 0.3 K/W TC = 25°C 110 W t = 10 ms; (50 Hz), sine TVJ = 45°C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 125 °C 440 A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.35 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.31 kA²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 970 A²s 940 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 64 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.45 A/µs; 45 A I G = 0.45 A; V = ⅔ VDRM 27 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 450 mA non-repet., I T = 100 A/µs 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 20A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 15 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200120d VW2x60-12io1 Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 125 °C -40 100 °C 125 °C 37 Weight MD 2 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute Date Code 2.5 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Prod. Index yywwA Part Number (Typ) Lot No.: Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Standard Ordering Number VW2x60-12io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product VW2x60-12io1 * on die level Delivery Mode Blister Code No. 519000 T VJ = 125°C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 8.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 24 Data according to IEC 60747and per semiconductor unless otherwise specified 20200120d VW2x60-12io1 3,6 ±0,5 Outlines V1-A-Pack 0,5 +0,2 35 26 63 31,6 2 max. 0,25 13 17 ±0,25 R2 52 (see 1) = *0 2 3 *7 *14 Ø 6,1 Ø 2,5 1,5 *7 5,5 *14 1 12,2 11,75 ±0,3 11,75 ±0,3 = 1x45° 15 4 5 6 4 *11 8 *7 *0 Ø 2,1 10 7 *14 9 6 5,5 *0 *11 6 0,5 *7 *14 25 Marking on product Aufdruck der Typenbezeichnung 25 Ø 0,8 * 25,75 ±0,3 25,75 1 ±0,2 ±0,3 Remarks / Bemerkungen: 1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm 2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad 4. Detail X : EJOT PT® self-tapping screws (dimension K25) to be recommended for mounting on PCB  selbstschneidende Schraube (Größe K25) empfohlen für die PCB-Montage Take care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm Bei der Wahl der Schraubenlänge die PCB-Dicke und die maximale Lochtiefe von 6mm beachten Recommended mounting torque: 1.5 Nm / Empfohlenes Drehmoment: 1.5 Nm  2 +0,2  1 2 7 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 5 6 4 9 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200120d VW2x60-12io1 Thyristor 80 500 104 50 Hz, 80% VRRM TVJ = 25°C VR = 0 V 70 TVJ = 60 125°C 50 IT 400 ITSM 300 40 [A] 2 It [A] TVJ = 45°C TVJ = 140°C 2 200 30 TVJ = 45°C 103 [A s] 20 100 TVJ = 140°C 10 0 0.0 102 0 0.5 1.0 1.5 2.0 0.01 0.1 VT [V] 1 1000 4 5 6 7 8 910 2 Fig. 3 I t versus time (1-10 s) 45 TVJ = 25°C 40 2 DC 180° sin 120° rect. 60° rect. 30° rect. 35 5 6 100 34 30 ITAVM tgd 1 1 3 t [ms] Fig. 2 Surge overload current ITSM: crest value, t: duration 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 2 t [s] Fig. 1 Forward characteristics 10 1 [V] [μs] typ. 10 25 [A] 20 lim. 15 10 4: PGAV = 0.5 W 0.1 1 10 5 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 100 1000 1 10 10000 0 100 1000 0 IG [A] IG [mA] 100 125 150 300 ZthJK [K/W] 1.25 0.021 ZthJK 75 Fig. 6 Max. forward current at case temperature 1.50 1.00 50 Tcase [°C] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 25 0.003 0.940 0.226 TVJ = 125°C t i [s] TK = 85°C 0.003 0.022 0.191 0.450 250 200 ITAVM 0.75 150 [A] [K/W] 0.50 0.25 0.00 0.001 0.01 0.1 RthJK [K/W] d: 1.22 0.27 0.30 0.37 180° 120° 60° 30° 1 Fig. 7 Transient thermal impedance junction to heatsink (per thyristor) © 2020 IXYS all rights reserved 50 10 0 0.0 1 0.1 1 10 t [s] t [s] IXYS reserves the right to change limits, conditions and dimensions. 100 Fig. 8 Rated RMS current vs. time (360° conduction) Data according to IEC 60747and per semiconductor unless otherwise specified 20200120d VW2x60-12io1 Rectifier 160 RthKA K/W 0.2 0.5 1 1.5 2 3 5 120 Ptot [W] 80 40 Circuit W3C2 1x VW2x60 0 0 10 20 30 40 50 60 0 25 50 IRMS [A] 75 100 125 150 TA [°C] Fig. 9 Load current capability for two phase AC controller 160 RthKA K/W 0.2 0.5 1 1.5 2 3 5 120 Ptot [W] 80 40 Circuit B2C 2x VW2x60 0 0 10 20 30 40 50 60 0 25 ITAVM [A] 50 75 100 125 150 TA [°C] Fig. 10 Power dissipation vs. direct output current and ambient temperature cyclo converter, four quadrant operation IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120d