VWI15-12P1

Advanced Technical Information IGBT Module Sixpack in ECO-PAC 2 VWI 15-12P1 IC25 VCES VCE(sat) typ. S9 L9 N5 N9 R5 X 18 W 14 A5 D5 H5 A1 F3 G1 C1 K 10 = 18 A = 1200 V = 2.3 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 18 14 20 VCES 10 90 µs V V A A A Features • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Typical Applications W • AC drives • power supplies with power factor correction Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.7 4.5 0.8 200 50 40 290 60 1.2 1.1 600 45 2.7 2.7 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.4 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 10 A (per IGBT) (per IGBT) with heatsink compound IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 www.ixys.net IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 210 Advanced Technical Information VWI 15-12P1 Dimensions in mm (1 mm = 0.0394") Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 15 10 A A Symbol VF IRM t rr RthJC RthJH Conditions IF = 10 A; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) (per diode) with heatsink compound Characteristic Values min. typ. max. 2.6 1.9 13 110 5.0 3.0 V V A ns 3.5 K/W K/W Component Symbol TVJ Tstg VISOL Md a IISOL ≤ 1 mA; 50/60 Hz; t = 1 s mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 °C °C V~ Nm lb.in. m/s2 Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 2-2 210