VWM350-0075P

VWM 350-0075P VDSS = 75 V Ω RDSon = 2.3 mΩ ID25 = 340 A Three phase full bridge with Trench MOSFETs L+ Preliminary data T1 T2 T3 G1 G3 G5 S1 S3 S5 T4 T5 L1 L2 L3 T6 G2 G4 G6 S2 S4 S6 L- MOSFETs T1 - T6 Symbol Conditions VDSS TVJ = 25°C to 150°C Applications Maximum Ratings VGS 75 V ±20 V ID25 ID80 TC = 25°C TC = 80°C 340 250 A A ID25 ID80 TC = 25°C (diode) TC = 80°C (diode) 340 250 A A Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon VGS = 10 V; ID = ID80 VGSth VDS = 20 V; ID = 2 mA IDSS VDS = 75V; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS Qg Qgs Qgd td(on) tr td(off) tf 2.3 2 VGS= 10 V; VDS = 0.5 • VDSS; ID = 175 A; RG = 2.2 Ω Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: 4 V 0.02 mA mA - high level of integration - solder terminals for PCB mounting 0.2 µA - isolated DCB ceramic base plate with optimized heat transfer 0.25 VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 0.5 • VDSS; ID = 175A 3.3 mΩ AC drives • in automobiles - electric power steering - starter generator - etc... • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment 450 60 170 nC nC nC 60 170 320 200 ns ns ns ns VF (diode) IF = 175 A; VGS= 0 V 1.1 1.6 V t rr (diode) IF = 40 A; -di/dt = 200 A/µs; VDS= 30 V 90 ns RthJC RthJH with heat transfer paste 0.51 0.26 K/W K/W 340 Ratings and characteristic values are per individual MOSFET IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 VWM 350-0075P Module Symbol Equivalent Circuits for Simulation Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min Md Mounting torque (M5) Symbol Conditions Weight typ. -40...+175 -40...+125 °C °C 500 V~ 2 - 2.5 Nm Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 80 Thermal Response junction - case (typ.) Cth1 = 0.13 J/K; Rth1 = 0.08 K/W Cth2 = 0.22 J/K; Rth2 = 0.18 K/W g 340 Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 2-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670