VWO35-12HO7

VWO35-12HO7 Thyristor Module VRRM = 1200 V I TAV = 16 A VT = 1.19 V AC Controlling 3~ full-controlled Part number VWO35-12HO7 Backside: isolated H A I J B C L M E F N G Features / Advantages: Applications: Package: ECO-PAC1 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 9 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120b VWO35-12HO7 Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 50 µA 2 mA TVJ = 25°C 1.23 V 1.48 V 1.19 V IT = 15 A IT = 30 A IT = 15 A IT = 30 A I RMS RMS forward current per phase 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 85 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.51 V T VJ = 125 °C 16 A 35 A TVJ = 125 °C 0.88 V 21 mΩ 1.3 K/W 0.5 K/W TC = 25°C 77 W t = 10 ms; (50 Hz), sine TVJ = 45°C 200 A t = 8,3 ms; (60 Hz), sine VR = 0 V 215 A t = 10 ms; (50 Hz), sine TVJ = 125 °C 170 A t = 8,3 ms; (60 Hz), sine VR = 0 V 185 A t = 10 ms; (50 Hz), sine TVJ = 45°C 200 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 190 A²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 145 A²s 140 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 7 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.15 A/µs; 45 A I G = 0.15 A; V = ⅔ VDRM 15 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current non-repet., I T = pF 5 W 2.5 W 0.5 W 100 A/µs 500 A/µs TVJ = 125°C 500 V/µs VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 2.5 V VD = 6 V TVJ = 25 °C 25 mA TVJ = -40 °C 50 mA TVJ = 125°C 0.2 V 3 mA TVJ = 25 °C 75 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.1 A; di G /dt = V 0.1 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 50 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.1 A; di G /dt = VR = 100 V; I T = 0.1 A/µs 15A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200120b VWO35-12HO7 Package Ratings ECO-PAC1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 40 Unit A -40 125 °C -40 100 °C 125 °C 19 Weight MD 1.4 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 2 Nm terminal to terminal 6.0 mm terminal to backside 10.0 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Date Code/Location Logo yywwZ 123456 XXX XX-XXXXX Part Number Ordering Standard Circuit Diagram Lot# Ordering Number VWO35-12ho7 Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Box Quantity 25 Code No. 479667 T VJ = 125°C Thyristor V 0 max threshold voltage 0.88 R0 max slope resistance * 18 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product VWO35-12ho7 V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200120b VWO35-12HO7 2 8 9 Ø 1,5 20,30 +0,50 / - 0,10 Outlines ECO-PAC1 Ø4 ,3 ±0 ,2 7,6 ±0,30 7,6 30,30 ±0,20 ±0,30 2x M4 10,80 ±0,30 10,80 ±0,30 8,7 ±0,30 8,6 ±0,30 8,6 ±0,30 39 8,6 ±0,30 8,6 ±0,30 8,7 ±0,30 47 ± 0,2 H A I IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved J B C L M E F N G Data according to IEC 60747and per semiconductor unless otherwise specified 20200120b VWO35-12HO7 Thyristor 50 200 300 40 TVJ = 45°C IF 30 200 2 IFSM It TVJ = 125°C [A] 20 TVJ = 125°C [A] TVJ = 25°C TVJ= 45°C 100 2 [A s] 100 TVJ= 125°C 10 50Hz, 80% VRRM 0 0.0 0.5 1.0 1.5 0 0.001 2.0 0 0.01 VF [V] 1 10 40 DC = 1 0.5 0.4 0.33 0.17 0.08 30 Limit 100 5 VG Fig. 3 I t vs. time per thyristor TVJ = 25°C typ. 4 5 6 7 89 t [ms] 1000 6 3 2 Fig. 2 Surge overload current vs. time per thyristor 1: IGD, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C tgd 4 IT(AV)M 20 3 [V] 2 1 t [s] Fig. 1 Forward current vs. voltage drop per thyristor 100 0.1 [μs] 2 [A] 10 1 10 1 0.1 100 4: PGAV = 5 W 5: PGM = 2.5 W 6: PGM = 0.5 W 101 102 1 10 103 0 100 Fig. 4 Gate trigger characteristics 50 150 Fig. 5 Max. forward current vs. case temperature per thyristor 1.4 DC = 1 0.5 25 0.4 0.33 20 0.17 0.08 RthHA: 1.2 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W 1.0 ZthJC 0.8 Constants for ZthJC calc.: 15 [K/W]0.6 10 0.4 5 0.2 0 0.0 0 100 TC [°C] Fig. 5 Gate trigger delay time 30 [W] 0 IG [mA] IG [mA] Ptot 1000 5 10 15 20 IT(AV)M [A] 0 50 100 Tamb [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per thyristor IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 1 10 i Rth (K/W) ti (s) 1 2 3 4 5 0.020 0.150 0.260 0.510 0.360 0.0004 0.0100 0.0280 0.1200 0.4500 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per thyristor Data according to IEC 60747and per semiconductor unless otherwise specified 20200120b