S8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W RΘJA Thermal Resistance from Junction to Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit 40 V IC=1mA, IB V(BR)CEO = 0 25 V V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE 0 = 0.1 μA Collector cut-off current ICEO = 0 VCB= 20V , I E 0.1 μA Emitter cut-off current IEBO = 0 VEB= 5V , IC 0.1 μA hFE(1) VCE= 1V, I C= 50mA 120 hFE(2) VCE= 1V, I C= 500mA 50 Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain IC= 100μA, IE=0 400 Collector-emitter saturation voltage VCE(sat) I=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V fT Transition frequency VCE= 6V, I C= 20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range L H J 120-200 200-350 300-400 D,Feb,2014 Typical Characterisitics Static Characteristic 100 hFE DC CURRENT GAIN (mA) IC Ta=100℃ 300uA 60 —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 350uA IC COLLECTOR CURRENT hFE 1000 400uA 80 S8050 250uA 200uA 40 150uA Ta=25℃ 100 100uA 20 IB=50uA 10 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 20 1 3 30 10 IC VBEsat 1.2 500 100 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 1 3 30 10 COLLECTOR CURRENT IC 500 IC 0.0 500 100 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 100 Ta=25℃ Cib (pF) 30 30 C Ta=25℃ 10 CAPACITANCE IC (mA) COMMON EMITTER VCE=1V COLLECTOR CURRENT 500 (mA) Ta=100℃ 3 1 Cob 10 3 0.3 0.1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 —— IC PC —— 400 10 3 REVERSE VOLTAGE V 20 (V) Ta VCE=6V COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ fT TRANSITION FREQUENCY 1 0.3 BASE-EMMITER VOLTAGE VBE (V) 100 10 10 300 200 100 0 100 30 COLLECTOR CURRENT IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) D,Feb,2014