24-00181

COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features • 35 – 200 µm aperatures available • High-efficiency, MOCVD quantum well design • Open heat sink packages and encapsulated devices • High reliability The 24xx series diode lasers represent a breakthrough in high continuous wave (CW) optical power and ultra high brightness with unsurpassed reliability. The small emitting aperture, combined with low beam divergence, makes the 24xx series the highest brightness family of CW diode lasers available in the industry. The 24xx series consists of partially coherent broad-area emitters, with relatively uniform emission over the emitting aperture. Operation is multi-longitudinal mode with a spectral envelope width of approximately 2 nm full width half maximum (FWHM). The far field beam divergence in the plane perpendicular to the P/N junction is nearly Gaussian, while the lateral beam profile exhibits a multiple-transverse mode pattern typical of broad-area emitters. The 24xx series offer up to 8.5 W of output from a 200 µm aperture. The high efficiency of the quantum well structure, combined with low thermal resistance epi-down chip mounting, provides minimum junction temperature at high optical power. Low junction temperature and low thermal resistance packages extend lifetime and increase reliability. These diodes are mounted on conventional open heat sink packages and encapsulated devices, allowing for easy integration into user systems. Applications • Solid-state laser pumping • Medical/ophthalmic applications • Free-space communication • Beacons/illumination NORTH AMERICA : 800 498-JDSU (5378) WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com 24XX SERIES DIODE LASERS 2 Dimensions Diagram (Specifications in inches [mm] unless otherwise noted.) Standard Tolerances inches: x.xx = ±0.02 mm: x.x = ±0.5 x.xxx = ±0.010 x.xx = ±0.25 Package Style: Open Heat Sink (A) 0.086 (2.18) 0.06 (1.5) Case is anode ( + ) 0.40 Nom. (10.0) θ θ 0.025 (0.64) Protective Tab Laser Output 0.31 (8.0) 0.157 (3.98) Cathode Lead ( - ) 0.110 (2.80) Insulator Stand-off 0.125 (3.18) 0.25 (6.4) Hole, 0.09 (2.3) Dia. Counterbore, 0.18 (4.4) Dia. 0.05 (1.2) Deep Package Style: SOT-148 Window (G1) Pinout 0.05 (1.3) 0.26 Nom. (6.6) 0.20 (5.1) 0.14 (3.5) Laser Facet Depth = 0.04 (1.0) Nom. 0.354 ±0.005 (9.00 ±0.13) 0.260 ±0.005 (6.60 ±0.13) 0.14 (3.6) Pin 1 2 3 Description 3 Laser cathode (–) Laser anode, MPD cathode and case ground Monitor photodiode anode (+) 2 1 0.10 (2.5) Laser Output θ θ Window: AR Coating, Both Surfaces Thickness: 0.0100 ±0.002 (0.25 ±0.05) 24XX SERIES DIODE LASERS 3 Dimensions Diagram (Specifications in inches [mm] unless otherwise noted.) Standard Tolerances inches: x.xx = ±0.02 mm: x.x = ±0.5 x.xxx = ±0.010 x.xx = ±0.25 Package Style: TO-56 Window (J1) Pinout 0.04 (1.0) 0.26 (6.5) 0.14 (3.6) 0.10 (2.4) Laser Facet Depth = 0.05 (1.2) Nom. 3 2 1 0.08 (2.0) Laser Output 0.14 (3.6) 0.17 (4.2) 0.05 (1.3) Pin 1 2 3 Description Laser cathode (–) Laser anode, MPD cathode and case ground Monitor photodiode anode (+) θ θ Window: AR Coating, Both Surfaces Thickness: 0.010 ±0.001 (0.25 ±0.03) Package Style: Open Heat Sink (Y) 0.157 (4.0) 0.06 (1.5) Case is anode ( + ) 0.40 Nom. (10.2) θ θ 0.155 (3.94) 0.31 (8.0) Cathode Lead (-) Laser Output Insulator Stand-off 0.110 (2.80) 0.125 (3.18) 0.25 (6.4) Hole, 0.09 (2.3) Dia. Counterbore, 0.18 (4.4) Dia. 0.05 (1.2) Deep 24XX SERIES DIODE LASERS 4 Dimensions Diagram (Specifications in mm unless otherwise noted.) Standard Tolerances mm: x.x = ±0.5 x.xx = ±0.25 Package Style: LX Submount 2 CL OF SOLDER 1.50 1.75 2.95 0 5.75 2 CL OF CHIP 4.50 0.49±0.04 24XX SERIES DIODE LASERS 5 Available Configurations 2445 Series 2455 series 2465 Series 2475 Series 2495 Series 2496 Series G-package G-package A-block A-block Y-block Y-block A-block LX submount Electro-optical Specifications Parameter Laser Characteristics CW output power Center wavelength and tolerance Symbol Min. Po λc – 2445-G1 0.6 W Typ. Max. – 0.6 808 (±2.5) 808 (±7) 2 – 1.15 – 45 – 100 x 1 – 7 30 – 0.32 0.85 1.8 0.27 12 – 10 33 – 0.40 1.00 2.0 – – 30 2455-G1 1.2 W Min. Typ. Max. – – 1.2 808 (±2.5) 808 (±7) 2 – 1.15 – 45 – 100 x 1 – 7 30 – 0.32 1.35 1.9 0.27 12 – 10 33 – 0.40 1.55 2.0 – – 30 Unit W nm nm W/A % µm degrees degrees degrees A A V Ω °C/W °C Spectral width Δλ Slope efficiency ηd = Po/(Iop–Ith) Conversion efficiency η = Po/(IopVop) Emitting dimensions WxH FWHM beam divergence Parallel to junction θ// Perpendicular to junction θ⊥ 90% power in angle beam divergence Parallel to junction θ//,90% Threshold current Ith Operating current Iop Operating voltage Vop Series resistance Rs Thermal resistance Rth Recommended case temperature Tc Absolute Maximum and Minimum Ratings Breakdown voltage Vb Case operating temperature Top Storage temperature range Tstg Lead soldering temperature Tis Monitor Photodiode Sensitivity Capacitance Breakdown voltage Operating voltage Reliability (at Po, 25°C) Mean time to failure Note: Typical value at 25°C and 0.6 NA collection optics – 1.00 – – – – 5.6 – – – – – 15 – 1.00 – – – – 5.6 – – – – – 15 3 -20 -40 – – – – – – 50 80 250 (5 sec.) 3 -20 -40 – – – – – – 50 80 250 (5 sec.) V °C °C °C – – Vbd Vop 0.2 – – – – 6 25 10 10 – – – 0.2 – – – – 6 25 10 10 – – – µA/mW pF V V MTTF – 200,000 – – 200,000 – Hr 24XX SERIES DIODE LASERS 6 Electro-optical Specifications Parameter Laser Characteristics CW output power Center wavelength and tolerance Symbol Min. Po λc – 2455-A1.2 W Typ. Max. – 1.2 808 (±2.5) 808 (±7) 2 – 1.15 – 45 – 100 x 1 – 7 30 – 0.32 1.35 1.9 0.27 12 – 11 33 – 0.40 1.55 2.0 – – 30 Min. – 2465-A 2.0 W Typ. Max. – 2.0 808 (±2.5) 808 (±7) 2 – 1.10 – 45 – 100 x 1 – 7 30 – 0.65 2.40 1.8 0.09 6 – 11 33 – 0.75 2.80 2.0 0.12 – 30 Unit W nm nm W/A % µm degrees degrees degrees A A V Ω °C/W °C Spectral width Δλ Slope efficiency ηd = Po/(Iop–Ith) Conversion efficiency η = Po/(IopVop) Emitting dimensions WxH FWHM beam divergence Parallel to junction θ// Perpendicular to junction θ⊥ 90% power in angle beam divergence Parallel to junction θ//,90% Threshold current Ith Operating current Iop Operating voltage Vop Series resistance Rs Thermal resistance Rth Recommended case temperature Tc Absolute Maximum and Minimum Ratings Breakdown voltage Vb Case operating temperature Top Storage temperature range Tstg Lead soldering temperature Tis Reliability (at Po, 25°C) Mean time to failure Note: Typical value at 25°C and 0.6 NA collection optics – 1.00 – – – – 5.6 – – – – – 15 – 0.95 – – – – 5.6 – – – – – 15 3 -20 -40 – – – – – – 50 80 250 (5 sec.) 3 -20 -40 – – – – – – 50 80 250 (5 sec.) V °C °C °C MTTF – 200,000 – – 200,000 – Hr 24XX SERIES DIODE LASERS 7 Electro-optical Specifications Parameter Laser Characteristics CW output power Center wavelength and tolerance Symbol Min. Po λc – 2475-A 3.0 W Typ. Max. – 3.0 808 (±2.5) 808 (±7) 2 – 1.10 – 45 – 100 x 1 – 7 30 – 0.65 3.40 1.9 0.09 6 – 11 33 – 0.75 3.90 2.1 0.12 – 30 2495-Y- 5.0 W Min. Typ. Max. – – 808 (±3) 808 (±7) 2 1.05 45 100 x 1 8 30 – 0.90 5.80 1.9 0.06 5 – 5.0 Unit W nm nm W/A % µm degrees degrees degrees A A V Ω °C/W °C Spectral width Δλ Slope efficiency ηd = Po/(Iop–Ith) Conversion efficiency η = Po/(IopVop) Emitting dimensions WxH FWHM beam divergence Parallel to junction θ// Perpendicular to junction θ⊥ 90% power in angle beam divergence Parallel to junction θ//,90% Threshold current Ith Operating current Iop Operating voltage Vop Series resistance Rs Thermal resistance Rth Recommended case temperature Tc Absolute Maximum and Minimum Ratings Breakdown voltage Vb Case operating temperature Top Storage temperature range Tstg Lead soldering temperature Tis Reliability (at Po, 25°C) Mean time to failure Note: Typical value at 25°C and 0.6 NA collection optics – 0.95 – – – – 5.6 – – – – – 15 – 0.90 – – – – 5.6 – – – – – 15 – – – – 11 33 – 1.05 6.30 2.1 0.09 – 30 3 -20 -40 – – – – – – 50 80 250 (5 sec.) 3 -20 -40 – – – – – – 50 80 250 (5 sec.) V °C °C °C MTTF – 100,000 – – – – Hr 24XX SERIES DIODE LASERS 8 Electro-optical Specifications Parameter Laser Characteristics CW output power Center wavelength and tolerance Spectral width Slope efficiency Conversion efficiency Emitting dimensions FWHM beam divergence Parallel to junction Perpendicular to junction Threshold current Operating current Operating voltage Series resistance Thermal resistance Recommended case temperature Symbol Min. Po λc Δλ ηd = Po/(Iop–Ith) η = Po/(IopVop) WxH θ// θ⊥ Ith Iop Vop Rs Rth Tc – 2496-Y- 8.5 W Typ. – 808 (±3) 808 (±7) 2 1.12 45 200 x 1 9 30 1.9 10.0 1.9 0.03 4.0 – Unit Max. 8.5 W nm nm W/A % µm degrees degrees A A V Ω °C/W °C – 1.05 – – – – – – – – – 15 – – – – 12 33 2.0 10.5 2.1 – – 30 Absolute Maximum and Minimum Ratings Breakdown voltage Vb Case operating temperature Top Storage temperature range Tstg Lead soldering temperature Tis Reliability (at Po, 25°C) Mean time to failure Note: Typical value at 25°C and 0.6 NA collection optics 3 -20 -40 – – – – – – 50 80 250 (5 sec.) V °C °C °C MTTF – 40,000 – Hr 24XX SERIES DIODE LASERS 9 Typical Optical Characteristics 2455 Light vs. Current 2.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 2465 Light vs. Current CW Output Power (W) 1.5 1.0 0.5 0.0 0.0 0.5 1.0 Current (A) 1.5 2.0 CW Output Power (W) 0.5 1.0 1.5 2.0 2.5 Current (A) 2475 Light vs. Current 4.0 3.5 CW Output Power (W) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Current (A) CW Output Power (W) 5.0 4.0 3.0 2.0 1.0 0.0 0.0 1.0 6.0 2495 Light vs. Current 2.0 3.0 Current (A) 4.0 5.0 6.0 2496 Light vs. Current 10 8 6 4 2 0 CW Output Power (W) 0 2 4 6 Current (A) 8 10 12 24XX SERIES DIODE LASERS 10 Typical Optical Characteristics Far Field Energy Distribution Far Field Energy Distribution Typical Emission Spectrum FWHM ~ 30 deg FWHM ~ 8 deg -30 -20 -10 0 10 20 30 -10 -5 0 5 10 θ (degrees) θ 805 (degrees) 810 815 Wavelength (nm) Ordering Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at customer.service@jdsu.com. Sample: 24-00135 Part Number Call for samples Call for samples 24-00135 24-00166 24-00138 24-00141 24-00167 24-00168 24-00144 24-00169 24-00170 24-00171 24-00147 24-00172 24-00150 24-00173 24-00178 24-00179 24-00180 24-00181 Power 0.2 – 1.2 W 0.2 – 1.2 W 0.6 W 0.6 W 1.2 W 1.2 W 1.2 W 1.2 W 2W 2W 2W 2W 3W 3W 5W 5W 8.5 W 8.5 W 8.5 W 8.5 W Emitter Width 35 – 100 µm 35 – 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 100 µm 200 µm 200 µm 200 µm 200 µm Wavelength 808 (± 2.5) 808 (± 7) 808 (± 2.5) 808 (± 7) 808 (± 2.5) 808 (± 2.5) 808 (± 7) 808 (± 7) 808 (± 2.5) 808 (± 2.5) 808 (± 7) 808 (± 7) 808 (± 2.5) 808 (± 7) 808 (± 3) 808 (± 7) 808 (± 3) 808 (± 7) 808 (± 3) 808 (± 7) Package 5.6 mm TO-56 5.6 mm TO-56 9 mm SOT-148 9 mm SOT-148 9 mm SOT-148 Open Heat Sink "A" 9 mm SOT-148 Open Heat Sink "A" Open Heat Sink "A" 9 mm SOT-148 Open Heat Sink "A" 9 mm SOT-148 Open Heat Sink "A" Open Heat Sink "A" Open Heat Sink "Y" Open Heat Sink "Y" Open Heat Sink "Y" Open Heat Sink "Y LX submount LX submount 2 4XX SERIES DIODE LASERS User Safety Safety and Operating Considerations The laser light emitted from this diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser, into the collimated beam along its optical axis, or directly into the fiber when the device is in operation. CAUTION: THE USE OF OPTICAL INSTRUMENTS WITH THIS PRODUCT WILL INCREASE EYE HAZARD. Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with the component must be employed such that the maximum peak optical power cannot be exceeded. CW diode lasers may be damaged by excessive drive current or switching transients. When power supplies are used, the diode laser should be connected with the main power on and the output voltage at zero. The current should be increased slowly while the diode laser output power and the drive current are monitored. Device degradation accelerates with increased temperature, and therefore careful attention to minimize the case temperature is advised. For example, life expectancy will decrease by a factor of four if the case is operated at 50°C rather than 30°C. A proper heatsink for the diode laser on a thermal radiator will greatly enhance laser life. Firmly mount the laser on a radiator with a thermal impedance of less than 0.5°C/W for increased reliability. ESD PROTECTION – Electrostatic discharge is the primary cause of unexpected diode laser failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling diode lasers. Labeling 21 CFR 1040.10 Compliance Because of the small size of these devices, each of the labels shown is attached to the individual shipping container. They are illustrated here to comply with 21 CFR 1040.10 as applicable under the Radiation Control for Health and Safety Act of 1968. Serial Number Identification Label JDS Uniphase Corporation MODEL: MANUFACTURED: WAVELENGTH: I op: S/N: Output Power Danger Labels Package Aperture Label DANGER INVISIBLE LASER RADIATION IS EMITTED AS SHOWN. 3011 DANGER INVISIBLE LASER RADIATION* Laser Radiation AVOID EYE OR SKIN EXPOSURE TO DIRECT OR SCATTERED RADIATION GaAlAs Diode CW 8 W max. 3110 CLASS IV LASER PRODUCT *SEE MANUAL This laser product complies with 21 CFR 1040 as applicable 2455 Series 2465 Series 2475 Series 2495 Series 2496 Series A Package Diodes NORTH AMERICA : 800 498-JDSU (5378) WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com Product specifications and descriptions in this document subject to change without notice. © 2009 JDS Uniphase Corporation 10127871 010 0309 24XXDIODELASER.DS.CL.AE March 2009