EPM605-250

COMMUNICATIONS COMPONENTS C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical - Low back reflection - High responsivity in L-band at 1625 nm (EPM 606) • Packaging - Single mode 900 µm fiber with or without a connector - Single mode 250 µm fiber without a connector - Small form factor (SFF) package available Applications • C- and L-Band monitoring • High sensitivity monitoring • EDFA and DWDM • 40 and 10 Gb/s line monitoring • 980 forward pump • 1310 and 1550 PONs The JDSU EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in our wafer fab and assembled into an hermetically-sealed package with antireflective-coated lens. A stainless steel bushing is used to actively couple the fiber to the package. The fiber is reinforced with a rubber boot, which relieves fiber bending stresses. EPM 6xx Series photodiodes can be produced with or without a variety of industry standard connectors. They are also available with mounting brackets, allowing both vertical panel and horizontal flush-to-board mounting. Low leakage versions (EPM 605LL and EPM 606LL) of the EPM 605 and EPM 606 are available with the same features, connectors, and brackets. Besides, we also offer the small form factor (SFF) packages (EPM635 and EPM635-75) that are designed for the SFF applications. NORTH AMERICA : 800 498-JDSU (5378) WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com C-BAND, L-BAND, PASS BAND LOW LEAKAGE PIN PHOTODIODES 2 Application Preference Application/Product C-band C-band, high sensitivity L-band L-band, low sensitivity 1310 band EDFA DWDM 40 Gb and 10 Gb line monitors 980 forward pump 1310/1550 PON networks 1480 pump monitors EPM 605 EPM 605LL EPM 606 EPM 606LL EPM 613 EPM 650 •• •• •• • •• •• •• • • • • •• • • •• •• •• •• •• •• • • • • • •• •• •• • • • Preference •• •• •• • • • •• • • • • • •• •• •• Strong Preference • Typical Spectral Response (23°C) Dark Current vs. Reverse Bias 1E-07 1.0 0.8 1E-08 Responsivity (A/W) 0.6 Dark Current (A) 1E-09 0.4 1E-10 85˚C 65˚C 45˚C 25˚C 0.2 0.0 1E-11 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 Wavelength (nm) Reverse Voltage (V) C-BAND, L-BAND, PASS BAND LOW LEAKAGE PIN PHOTODIODES 3 Capacitance vs. Reverse Bias (23 °C) (EPM 605/606) Optical Response Nonlinearity (Typical, -5 V bias) 1.4 1.2 1.0 6% 4% Capacitance (pF) Nonlinearity (%) 2% 0% -2% -4% -6% -8% -10% 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 0.01 0.1 1 10 100 Reverse Voltage (V) Input Optical Power (mW) PDL vs. Temperature (EPM 613) 0.12 Responsivity vs. Temperature (EPM 613) 0.7 0.1 0.66 Responsivity (A/W) PDL (dB) 0.08 0.62 0.06 EPM 613 0.58 EPM 613 Device 1 Power = 1 mW 0.04 λ = 980 nm EPM 613 0.54 Bias = -5V λ = 980 nm EPM 613 Device 2 EPM 613 Device 3 0.02 20 25 30 35 40 45 50 55 60 65 0.5 0 10 20 30 40 50 60 70 80 90 Temperature (˚C) Temperature (˚C) PDL vs. Temperature (EPM 606) p 0.1 Responsivity vs. Temperature (EPM 606) 1.2 0.08 1 0.06 Responsivity (A/W) PDL (mdB) 0.8 0.04 Sample 1 0.6 Sample 1 Sample 2 Sample 3 0.02 λ = 1620 nm Sample 2 0.4 λ = 1620 nm, Vb = -5V, Pin = 0.5 mW Sample 4 0 0 10 20 30 40 50 60 70 0.2 -40 -20 0 20 40 60 80 Temperature (˚C) Temperature (˚C) C-BAND, L-BAND, PASS BAND LOW LEAKAGE PIN PHOTODIODES 4 Responsivity vs. Wavelength, Temperature (EPM 605) 1 0.1 0.99 0.095 PDL vs. Wavelength, Temperature (EPM 605) Responsivity (A/W) 0.98 0.09 0.97 0.96 PDL (dB) 15˚C 23˚C 0.085 0.08 0.95 0.94 0.075 0.07 15˚C 23˚C 65˚C 0.93 0.92 1525 1530 65˚C 0.065 0.06 1535 1540 1535 1540 1545 1550 1555 1560 1565 1545 1550 1555 1560 1565 Wavelength (nm) Wavelength (nm) PDL vs. Temperature (EPM 605) 0.08 Responsivity vs. Temperature (EPM 605) 1 0.07 0.06 0.05 0.04 0.96 Responsivity (A/W) PDL (dB) 0.92 0.03 0.02 λ = 1550 nm λ = 1310 nm EPM 605 (1310 nm) EPM 605 (1310 nm) EPM 605 (1550 nm) EPM 605 (1550 nm) 0.88 Sample 5 Sample 6 Sample 7 0.84 λ = 1550 nm, Vb = -5V, Pin = 0.5 mW 0.01 0 20 25 30 35 40 45 50 0.8 55 60 65 70 -40 -20 0 20 40 60 80 Temperature (˚C) Temperature (˚C) Optical Power Linearity (EPM 605) 1.10 1.06 1.02 λop = 1550 nm Optical Power Linearity (EPM 650) 1.10 1.00 Responsivity (A/W) Responsivity (A/W) 0.98 0.94 0.90 0.86 0.82 0.78 0.74 0.70 0 2 4 6 8 10 12 14 16 18 20 Bias = -5.0V Bias = -3.3V Bias = 0.0V Responsivity = 1.02 A/W 0.90 λop = 1550 nm 0.80 0.70 Bias = -5.0V 0.60 Bias = -3.3V Bias = 0.0V 0.50 Responsivity = 1.02 A/W 0.40 0 2 4 6 8 10 12 14 Optical Power (mW) Optical Power (mW) C-BAND, L-BAND, PASS BAND LOW LEAKAGE PIN PHOTODIODES 5 Equivalent Circuit for EPM 6xx Series Rs 1.5 nH 0.50 pF 5 nH Cp 0.13 pF 1 nH 0.50 pF CASE 5 nH Model EPM 605 EPM 606 EPM 613 EPM 650 EPM 635 EPM 635-75 Rs 5Ω 5Ω 5Ω 6Ω 5Ω 5Ω Cp 0.55 pF 0.55 pF 0.75 pF 1.00 pF 6.00 pF 0.90 pF Dimensions Diagram (Specifications in mm unless otherwise noted.) EPM 6xx with Dual Mount Bracket EPM 6xx without Dual Mount Bracket C-BAND, L-BAND, PASS BAND LOW LEAKAGE PIN PHOTODIODES 6 Dimensions Diagram (Specifications in mm unless otherwise noted.) EPM 635 EPM 635-75 Specifications (Temperature = 25°C, V PD = -5 V and wavelength = 1550 nm, unless otherwise noted.) Parameter Active diameter Responsivity Back reflection Dark current Capacitance1 Bandwidth1,2 Maximum Ratings Forward current Reverse current Reverse voltage Power dissipation Operating temperature Storage temperature Typical Minimum Minimum Maximum Typical Maximum Typical Maximum Maximum Maximum Maximum EPM 635 300 µm 0.85 A/W -40 dB 0.6 nA 6.0 pF 7.0 pF 300 MHz 10 mA 10 mA 25 V 100 mW -40 to 85 °C -40 to 85 °C EPM 635-75 75 µm 0.85 A/W -40 dB 0.08 nA 0.9 pF 1.4 pF 2000 MHz 1. Measured with leads trimmed or referenced to 3 mm length maximum. 2. -3 dB point into a 50 Ω load. C-BAND, L-BAND, PASS BAND LOW LEAKAGE PIN PHOTODIODES 7 Specifications Parameter Active diameter Responsivity λ = 980 nm λ = 1310 nm λ = 1550 nm λ = 1625 nm Back reflection λ = 980 nm λ = 1310 nm λ = 1550 nm λ = 1625 nm Dark current Standard leakage Low leakage Capacitance1 Bandwidth2 PDL λ = 980 nm λ = 1310 nm λ = 1550 nm λ = 1625 nm Isolation between bands 1310 and 1550 nm 980 and 1550 nm Maximum Ratings Forward current3 Reverse current4 Reverse voltage Power dissipation Operating case temperature Soldering temperature Storage temperature 1. Measured with case grounded. 2. -3 dB point into a 50 Ω load. 3. Under forward bias, current at which device may be damaged. 4. Under reverse bias, current at which device may be damaged. EPM 605 Typical Minimum Minimum Minimum Minimum Minimum Minimum Minimum Minimum Maximum Maximum Maximum Typical Typical Typical Typical Typical Typical Typical Maximum Maximum Maximum Maximum Maximum 75 µm 0.80 A/W 0.85 A/W -40 dB 0.6 nA 0.08 nA 0.75 pF 2.0 GHz 0.1 dB 0.1 dB - EPM 606 75 µm 0.85 A/W 0.80 A/W -40 dB 0.6 nA 0.08 nA 0.75 pF 2.0 GHz 0.1 dB 0.1 dB 10 mA 10 mA 25 V 100 mW -40 to 85 °C 250 °C -40 to 85 °C EPM 613 75 µm 0.30 A/W 0.85 A/W 0.0004 A/W -30 dB -40 dB 1.0 nA 0.9 pF 1.5 GHz 0.2 dB 33 dB 29 dB EPM 650 100 µm 0.80 A/W 0.85 A/W -27 dB 1.0 nA 1.25 pF 1.5 GHz 0.1 dB - C-BAND, L-BAND, PASS BAND LOW LEAKAGE PIN PHOTODIODES Ordering Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at customer.service@jdsu.com. Sample: EPM 606LL-250 EPM 6 + Code 05 05LL 06 06LL 13 50 35 35-75 Model Low back reflection, C-band PIN photodiode Low back reflection, low leakage, C-band PIN photodiode Low back reflection, L-band PIN photodiode Low back reflection, low leakage, L-band PIN photodiode Low back reflection, Pass-band PIN photodiode General purpose, high responsivity PIN photodiode SFF package with 300 µm detection window SFF package with 75 µm detection window + Code -250 + Buffer 250 µm buffer 900 µm buffer + Code W/DM BKT Bracket No bracket With dual mount bracket Code Connector No connector FC/APC FC/APC connector FC/SPC FC/SPC connector SC/SPC SC/SPC connector Precautions for Use Electrostatic discharge protection is imperative. Use of grounding straps, anti-static mats, and other standard ESD protective equipment is required when handling or testing an InGaAs PIN or any other junction photodiode. The flexible 250 µm fiber coating can be mechanically stripped and provides protection for the optical fiber, under normal handling characteristics. Soldering temperature of the leads should not exceed 260 °C for more than 10 seconds. Fiber pigtails should be handled with less than 10 N pull and with a bending radius greater than 1 inch. All statements, technical information and recommendations related to the products herein are based upon information believed to be reliable or accurate. However, the accuracy or completeness thereof is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. JDSU reserves the right to change at any time without notice the design, specifications, function, fit or form of its products described herein, including withdrawal at any time of a product offered for sale herein. JDSU makes no representations that the products herein are free from any intellectual property claims of others. Please contact JDSU for more information. JDSU and the JDSU logo are trademarks of JDS Uniphase Corporation. Other trademarks are the property of their respective holders. ©2006 JDS Uniphase Corporation. All rights reserved. 10143020 Rev. 004 03/06 EPM6XX.DS.CC.AE N ORTH AMERICA : 800 498-JDSU (5378) WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com