PL-DD0-00-S30-C0

COMMUNICATIONS COMPONENTS 850 nm 2.5 G GaAs PIN Die PL-DD0-00-S30-C0 Key Features • Topside connections for both contacts • Large topside detection area • Anti-reflective coating for 850 nm • Monolithic insulating mounting surface • Data rates from 622 Mbps to 2.5 Gbps • Custom physical configuration and performance specification tolerances are available Benefits • Large active area provides improved alignment tolerances and ease of barrel attachment • Small die dimensions allow flexible assembly options The JDSU single die 850 nm 2.5 Gbps GaAs PIN is designed for high-speed optical data communication applications. The topside illuminated device has a large optical detection area, Ø=120 mm, for increased process tolerance during assembly. The backside mounting surface is electrically isolated from the device electrodes for simplified assembly. The PIN is designed for datacom applications using 850 nm multi-mode 50/125 mm or 62.5/125 mm fiber. NORTH AMERICA: 800 498-JDSU (5378) wORlDwIDE: +800 5378-JDSU wEBSITE: www.jdsu.com 850 NM 2.5 G GAAS PIN DIE  Mounting Dimensions 0.310 0.155 4X 0.031 0.119 0.203 ±0.013 0.336 0.209 +0.010 - 0.000 0.089 0.005 0.005 +0.010 - 0.000 +0.010 - 0.000 0.005 1 0.005 0.089 +0.010 - 0.000 0.089 2 Note 1 Device Anode  Device Cathode Dimensions are in mm Shipping Information Shipped in anti-static 2” x 2” gel pack containers. 1000 per gel pack. Absolute Maximum Ratings (Tcase = 30 °C, Continuous Wave (CW) operation unless otherwise stated.) Parameter Storage temperature Forward current Reverse voltage Reverse current ESD1 Symbol Tst If BVRPD IR Ratings -40 to +125 5 -40 1 Class 1 Unit °C mA V mA Note: Conditions exceeding those listed may cause permanent damage to the device. Devices subjected to conditions beyond the limits specified for extended periods of time may adversely affect reliability. 1. HBM 850 NM 2.5 G GAAS PIN DIE Electro-optical Characteristics (Tcase = 30 °C, CW operation unless otherwise stated.) Parameter PIN Diode Detection wavelength Operating temperature Detection aperture Responsivity Dark current Breakdown voltage Capacitance Rise/Fall time1 Bandwidth Symbol lp Top D R ID VB C tr tf BW Test Condition Min. Typ. Max. Unit 850 -40 VR = 1.6 V l = 850 nm VR = 1.6 V VR = 2.0 V f = 1 MHz 20% - 80% 20% - 80% VR = 2.0 V 0.55 120 0.6 0.1 40 0.6 0.75 100 3 1.0 0.8 85 nm °C mm A/W nA V pF psec GHz 1. Packaging, coupling, electronics and optical measurement hardware affect rise/fall time measurement. Order Information For more information on this or other products and their availability, please contact your local JDSU account manager or J DSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at c ustomer.service@jdsu.com. Sample: Pl-DD0-00-S30-C0 Part Number PL-DD0-00-S30-C0 Description 850 nm .5 G GaAs PIN die NORTH AMERICA: 800 498-JDSU (5378) wORlDwIDE: +800 5378-JDSU wEBSITE: www.jdsu.com Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 30149324 000 0408 PL-DD0-00-S30-C0.DS.CC.AE April 2008