1N4148W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W SOD-123 FAST SWITCHING DIODE FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance + - MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 100 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 71 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Peak Forward Surge Current @t=1.0μs @t =1.0s 2.0 IFSM A 1.0 Pd 500 mW RθJA 250 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 ℃ Power Dissipation Thermal Resistance from Junction to Ambient Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse recovery time trr 4 ns Forward voltage Reverse current IF=IR=10mA Irr=0.1XIR,RL=100Ω A,Mar,2011 BAV16W/1N4148W Typical Characteristics Forward 1000 Characteristics (nA) 1 0.1 0.01 0.0 0.4 0.8 1.2 FORWARD VOLTAGE o 100 o Ta=25 C 10 1 1.6 0 20 (V) 40 60 REVERSE VOLTAGE Capacitance Characteristics 1.6 80 VR 100 (V) Power Derating Curve 600 (mW) Ta=25℃ f=1MHz PD 1.4 1.2 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) VF Characteristics Ta=100 C 1000 REVERSE CURRENT IR C o FORWARD CURRENT Ta =2 5 Ta =1 00 o IF C (mA) 100 10 Reverse 10000 1.0 0.8 0.6 0 4 8 12 REVERSE VOLTAGE 16 VR (V) 20 500 400 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃ ) A,Mar,2011