1N4148WS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit VRM 100 V Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 100 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 71 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Peak Forward Surge Current @t=1.0μs 2.0 IFSM @ t=1.0s Power Dissipation Thermal Resistance Junction to Ambient A 1.0 Pd 200 mW RθJA 625 ℃/W Junction Temperature Tj Storage Temperature TSTG 150 ℃ -55~+150 ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min Typ Max Unit Conditions VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz trr 4 ns IF=IR=10mA Irr=0.1XIR,RL=100Ω A,May,2011 Typical Characteristics Forward Characteristics 1N4148WS Reverse 1000 200 Characteristics 100 (nA) (mA) Ta=100℃ REVERSE CURRENT IR T= a 2 5℃ FORWARD CURRENT IF T= a 1 00 ℃ 10 1 0.1 0.01 0.0 Ta=25℃ 10 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 20 (V) 40 REVERSE VOLTAGE Capacitance Characteristics 1.2 100 60 VR 80 (V) Power Derating Curve 300 Ta=25℃ f=1MHz (mW) PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.0 200 150 100 50 0.8 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) A,May,2011