1SS226

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Plastic-Encapsulate Diodes SOT-23 SOT-23 1SS226 SWITCHING DIODE FEATURES z Low forward voltage z Fast reverse recovery time z Small total capacitance 1 3 2 MARKING: C3 Maximum Ratings ,Single Diode @Ta=25℃ Parameter Symbol Limit Unit 85 Non-Repetitive Peak Reverse Voltage VRM Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM V 80 V DC Blocking Voltage VR Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 100 mA Peak Forward Surge Current @t=10ms 2 IFSM A Power Dissipation PD 150 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol Test V(BR) IR= 100uA conditions Min Max 80 Unit V Reverse voltage leakage current IR VR=80V 0.5 uA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD VR=0V , f=1MHz 3 pF Reverse recovery time t rr IF=10mA 4 ns A,Jun,2011 Typical Characteristics Forward 100 Characteristics 1SS226 Reverse 1000 Characteristics (mA) Ta=100℃ (nA) REVERSE CURRENT IR 1 Ta =2 5℃ FORWARD CURRENT IF Ta =1 00 ℃ 10 0.1 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 Ta=25℃ 10 1 1.2 0 20 (V) 40 REVERSE VOLTAGE Capacitance Characteristics 1.2 100 60 VR 80 (V) Power Derating Curve 200 (mW) 150 PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 1.0 0.8 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) A,Jun,2011