2N3904-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN) TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is Recommended z This transistor is also available in the SOT-23 case with the type designation MMBT3904 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 0.2 A 0.625 W IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 μA IEBO VEB= 5V, IC=0 0.1 μA hFE1 VCE=1V, IC=10mA 100 hFE2 VCE=1V, IC=50mA 60 hFE3 VCE=1V, IC=100mA 30 Emitter cut-off current DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz Delay Time td VCC=3V,VBE=0.5V, 35 ns Rise Time tr IC=10mA,IB1=1mA 35 ns Storage Time ts VCC=3V, IC=10mA 200 ns Fall Time tf IB1=IB2=1mA 50 ns CLASSIFICATION Rank Range OF 300 MHZ hFE1 O Y G 100-200 200-300 300-400 B.Mar,2012 Typical Characteristics Static Characteristic 100 80 hFE 400uA 350uA 60 —— IC COMMON EMITTER VCE=1V 500uA 450uA DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 IC (mA) COMMON EMITTER Ta=25℃ 2N3904 300uA 250uA 200uA 40 150uA 20 Ta=100℃ 300 Ta=25℃ 100 30 100uA IB=50uA 0 10 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— IC Ta=25℃ 30 3 10 COLLECTOR CURRENT IC 200 100 30 —— Ic 1000 —— (mA) IC Ta=25℃ Ta=100℃ 100 3 1 200 (mA) 30 10 COLLECTOR CURRENT VBE Cob/ Cib 10 VCE=5V 100 —— IC 100 VCB/ VEB f=1MHz IE=0/IC=0 Cib Ta=25℃ (mA) Cob CAPACITANCE C 10 3 Ta=25℃ 1 1 0.3 0.4 0.6 0.8 BASE-EMMITER VOLTAGE fT 1000 —— 1.0 VBE IC fT 10 10 30 IC (mA) —— 10 V 20 (V) Ta 600 100 COLLECTOR CURRENT Pc 700 300 3 1 REVERSE BIAS VOLTAGE Ta=25℃ 5 0.3 (V) COMMON EMITTER VCE=20V 2 0.1 0.1 1.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLCETOR CURRENT IC (pF) Ta=100℃ 0.1 0.2 (MHz) 200 (mA) 30 TRANSITION FREQUENCY 200 100 IC β=10 β=10 1 VBEsat 3000 Ta=100℃ 10 30 10 COLLECTOR CURRENT 300 100 3 1 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 VCE 10 70 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B.Mar,2012