2N3904

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors %&' TRANSISTOR (NPN) (  z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is Recommended z This transistor is also available in the SOT-23 case with the type designation MMBT3904  1. EMITTER 2. BASE 3. COLLECTOR ): 2N 3904 z *** Equivalent Circuit 1 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH LIQRQHWKHQRUPDOGHYLFH ;;; &RGH 1  () # !34"# 87" 87 )".$0 8 9!2 1 72 %XON 1000pcs/Bag 17$ 72 7DSH  2000pcs/Box  )*))  +,-  !" $."#/" $"01 234$ #3""# 5!"  5 6 Collector-Base Voltage 60 V 5  Collector-Emitter Voltage 40 V 56 Emitter-Base Voltage 6 V 0.2 A 0.625 W  Collector Current -Continuous  Collector Power Dissipation TJ,7 www.jscj-elec.com Operation Junction and Storage Temperature Range 1 -55-150  Rev. - 2.0        Ta =25  unless otherwise specified #3""# 234$ " $0$ $"$#4" 4#"80$/ @$7" V(BR)CBO IC=10mA, IE=0 60 V $"$#"3"# 4#"80$/ @$7" = IC= 1mA , IB 0 V(BR)CEO 40 V 3"#4" 4#"80$/ @$7" V(BR)EBO 6 V IE= 10mA, IC=0 $"$# !$AA !##" = VCB=60V, IE 0 ICBO $"$# !$AA !##" ICEX ) 2 )?  = VCE=30V, VEB(off) 3V = VEB= 5V, IC 0 IEBO 3"# !$AA !##"  !##" 7 hFE1 VCE= 1V, IC=10mA 100 hFE2 VCE=1V, IC=50mA 60 hFE3 VCE= 1V, IC=100mA 30 0.1 uA 0.05 uA 0.1 uA 400 $"$#"3"# !#$ @$7" VCE(sat) IC=50mA, IB=5mA 0.3 V 6""3"# !#$ @$7" VBE(sat) IC=50mA, IB=5mA 0.95 V #$ A#"B!"2 fT VCE=20V,IC=10mA,f = 100MHz 300 MHZ "2 3" td VCC=3V,VBE=0.5V, 35 ns " 3" tr IC=10mA,IB1=1mA 35 ns $#7" 3" ts VCC=3V, IC=10mA 200 ns ( 3" tf IB1=IB2=1mA 50 ns (  ( .(D 8  7" www.jscj-elec.com O Y G 100-200 200-300 300-400 2 Rev. - 2.0 2  .#"#  .#"# COMMON EMITTER Ta=25ć 80 hFE 400uA 350uA 60  COMMON EMITTER VCE=1V 500uA 450uA DC CURRENT GAIN COLLECTOR CURRENT .( FF 1000 IC (mA) 100 300uA 250uA 200uA 40 150uA 20 Ta=100ć 300 Ta=25ć 100 30 100uA IB=50uA 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)  Ta=25ć 30 ȕ=10 1 3 10  FF 200 100 30 COLLECTOR CURRENT Ic ȕ=10 3 1 30 10 $4G 4 FF IC 200 100 (mA) 5 6G 56 f=1MHz IE=0/IC=0 Cib Ta=25ć 30 Ta=100ć (pF) (mA) Ta=25ć 10 IC Cob CAPACITANCE C 10 3 Ta=25ć 1 1 0.3 0.4 0.6 0.8 BASE-EMI7TER VOLTAGE 1.0 VBE 0.1 0.1 1.2 fT 2 5 10 COLLECTOR CURRENT www.jscj-elec.com 30 IC 20 (V) 600 Ta=25ć 100 10 10 V  FF  700 COMMON EMITTER VCE=20V 300 3 1 REVERSE BIAS VOLTAGE A FF  1000 0.3 (V) COLLECTOR POWER DISSIPATION Pc (mW) COLLCETOR CURRENT (mA)  COLLECTOR CURRENT 56 200 100 IC Ta=100ć 100 200 VCE=5V 0.1 0.2 (MHz) 1000 (mA) 100 TRANSITION FREQUENCY 56 FF 3000 Ta=100ć 10 30 10 COLLECTOR CURRENT 300 100 3 1 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 5  FF 1000 VCE 10 10 500 400 300 200 100 0 70 (mA) 0 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (ć ) Rev. - 2.0  87" !" 3"$ 234$ A A1 b c D D1 E e e1 L Κ h 3"$  )3""# 3"$  ." ) )? ) )? 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015  !77""0 0 2$! NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0