2N7000

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET (N-Channel) V(BR)DSS ID RDS(on)MAX TO-92      1. SOURCE 2. GATE 3. DRAIN APPLICATION FEATURE z z High density cell design for low RDS(ON) ! "#$%$!& '( ) z Voltage controlled small signal switch'*+'**,($!$ z z Rugged and reliable High saturation current capability z Equivalent Circuit MARKING 2N 7000  S G 34'(     !45$, , 2,(  #,,!",$ (  6664* D ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3 -./ 0 1 1000pcs/Bag 3- -./ -2 2000pcs/Box MAXIMUM RATINGS (Ta=25Я unless otherwise noted) Para meter Sy mbo Drain-Source Voltage Valu Unit V DS 60 V Continuous Drain Current ID 0.2 A Pow er Dissipation PD 0.  W R  JA  Я /W TJ,Tst g -5 ~ + 150 Я T hermal Resist ance from Junction to Ambient Operation Junction and Storage Temperature Range www.jscj-elec.com 1  Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Symbol Test conditions M V(BR)DSS VGS=0 V, ID=10PA 60 V(GS)th VDS=VGS, ID=1mA 0.8 T   7 V Gate-body Leakage lGSS VDS=0 V, VGS=±15 V ±10 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 PA On-state Drain Current ID(ON) VGS=4.5 V, VDS=10 V Drain-Source On-Resistance* RDS(on) Forward Trans conductance* Drain-source on-voltage* gfs VDS(on) 75 mA VGS=4.5V, ID=75mA 6 VGS=10V, ID=500mA 5 VDS=10 V, ID=200mA 100  ms VGS=10V, ID=500mA 2.5 V VGS=4.5V, ID=75mA 0.45 V Input Capacitance ** Ciss 60 Output Capacitance ** C)) VDS=25V, VGS=0V, f=1MHz  25 Reverse Transfer Capacitance ** Crss 5 Turn-on Time ** td(on) Turn-off Time ** td(off) VDD=15 V, RL=30  ID=500mA,VGEN=10 V RG=25  pF 10 10 ns *Pulse test **These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 2.0  $#$!$! ' '#$!$!  !"#$!$!  :  54 -4ć % ) / :    : /          547 7   '