2N7002T

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) V(BR)DSS ID RDS(on)MAX SOT-523 3  5Ω@10V 60 V 115mA 7Ω@5V 1. GATE 2. SOURCE 3. DRAIN 1 2 APPLICATION Load Switch for Portable Devices z DC/DC Converter FEATURE High density cell design for low RDS(ON) z Voltage controlled small signal switch z z Rugged and reliable z High saturation current capability z MARKING Equivalent Circuit K72 K72= Device Code Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage 60 V VGS Gate-Source voltage ±20 V ID PD Drain Current 115 mA Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 833 ℃/W RθJA TJ Junction Temperature Tstg Storage Temperature www.jscj-elec.com ℃ 150 -55~+150 1 ℃ Rev - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit V(BR)DSS VGS=0 V, ID=250 µA 60 Vth(GS) VDS=VGS, ID=250 µA 1 Gate-body Leakage lGSS VDS=0 V, VGS=±20 V ±80 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA On-state Drain Current ID(ON) VGS=10 V, VDS=7 V Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistance RDS(on) Forward Trans conductance gfs Drain-source on-voltage VDS(on) Diode Forward Voltage VSD Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2.5 500 V mA VGS=10 V, ID=500mA 5 VGS=5 V, ID=50mA 7 500 ms VGS=10V, ID=500mA 3.75 V VGS=5V, ID=50mA 0.375 V 1.2 V VDS=10 V, ID=200mA IS=115mA, VGS=0 V 80 Ω 0.55 50 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME Turn-on Time td(on) Turn-off Time td(off) www.jscj-elec.com VDD=25 V, RL=50Ω ID=500mA,VGEN=10 V RG=25 Ω 2 20 ns 40 Rev - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics 1.4 1.0 Ta=25℃ VGS=10V,9V,8V,7V,6V 1.2 Ta=25℃ VGS=5V Pulsed Pulsed (A) ID 0.8 DRAIN CURRENT DRAIN CURRENT ID (A) 0.8 1.0 VGS=4V 0.6 0.4 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0.4 0.2 VGS=3V 0.2 0.6 0.0 5 0 2 4 6 GATE TO SOURCE VOLTAGE (V) RDS(ON) —— ID 3 RDS(ON) —— 6 VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed RDS(ON) 2 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( Ω) ( Ω) Pulsed VGS=5V 1 VGS=10V 0 0.0 0.2 0.4 0.6 DRAIN CURRENT 0.8 ID 4 ID=500mA 2 0 1.0 ID=50mA 0 6 GATE TO SOURCE VOLTAGE (A) 12 VGS 18 (V) IS —— VSD 2 Ta=25℃ SOURCE CURRENT IS (A) 1 Pulsed 0.3 0.1 0.03 0.01 3E-3 1E-3 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.2 1.4 VSD (V) 3 Rev - 1.0 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1  Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev - 1.0 6277DSHDQG5HHO www.jscj-elec.com 5 Rev - 1.0