2SA1012

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-220-3L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) TO-220-3L FEATURES z High Current Switching Applications z Low Collector Saturation Voltage z High Speed Swithing Time 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit  2SA1012 'HYLFHFRGH 6ROLGGRW *UHHQPROGLQQFRPSRXQGGHYLFH  LIQRQHWKHQRUPDOGHYLFH XXXX=Code 2SA1012 XXXX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 2 W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ www.jscj-elec.com 1 Rev. - 2.1 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= =-0.1mA, IE 0 -60 V Collector-emitter breakdown voltage V(BR)CEO* I= C =-10mA, IB 0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= =-100μA, IC 0 -5 V Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain = VCB=-50V, IE 0 = VEB=-5V, IC 0 hFE(1) = VCE=-1V, IC -1A 70 hFE(2)* = VCE=-1V, IC -3A 30 -1 μA -1 μA 240 Collector-emitter saturation voltage VCE(sat)* IC=-3A, IB -150mA = --0.4 V Base-emitter saturation voltage VBE(sat)* = IC=-3A, IB -150mA --1.2 V Transition frequency fT Collector output capacitance Cob Turn-on Time ton Storage Time ts Fall Time tf = VCE=-4V, IC -1A VCB=-10V, IE=0, f=1MHz VCC=-30V,IC=-3A, IB1=-IB2=-0.15A 60 MHz 170 pF 0.1 1.0 μs 0.1 *Pulse test: tp≤300μs, δ≤0.02. CLASSIFICATION of hFE(1) Rank Range www.jscj-elec.com O Y 70-140 120-240 2 Rev. - 2.1 Typical Characteristics Static Characteristic -1.6 DC CURRENT GAIN -8mA -7mA -0.8 -6mA -5mA -0.6 -4mA -0.4 -2mA -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 COLLECTOR-EMITTER VOLTAGE VCEsat -500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COMMON EMITTER VCE=-1V IB=-1mA -0.0 -0.0 —— -1.6 VCE -1.8 10 -2.0 -1 -10 -100 IC VBEsat -1.2 Ta=25℃ Ta=100℃ -5000 -1000 COLLECTOR CURRENT (V) -100 IC (mA) IC —— -1.0 -0.8 Ta=25℃ -0.6 Ta=100℃ -0.4 β=20 -10 -10 -100 -1000 COLLECTOR CURRENT IC -5000 —— IC -0.2 -5000 -10 -100 -1000 COLLECTOR CURRENT VBE Cob/ Cib 10000 IC -5000 (mA) —— VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ Cib 1000 CAPACITANCE T= a 25 ℃ T= a 10 0℃ C (pF) (mA) -100 β=20 -1 (mA) COMMON EMITTER VCE=-1V -1000 IC Ta=25℃ 100 -3mA -0.2 COLLCETOR CURRENT IC Ta=100℃ hFE -9mA BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (A) -10mA -1.0 —— COMMON EMITTER Ta=25℃ -1.4 -1.2 hFE 1000 -10 Cob 100 -1 -0.1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 1000 —— -1.0 V BE 10 -0.1 -1.2 -1 -10 REVERSE VOLTAGE (V) IC PC 2500 —— V -30 (V) Ta VCE=-4V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ 100 10 1 -50 -100 -1000 COLLECTOR CURRENT www.jscj-elec.com IC 2000 1500 1000 500 0 -1500 (mA) 0 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) Rev. - 2.1 TO-220-3L Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F h L L1 Φ www.jscj-elec.com Dimensions In Millimeters Min Max 4.470 4.670 2.520 2.820 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 12.060 12.460 2.540 TYP 4.980 5.180 2.590 2.890 0.000 0.300 13.400 13.800 3.560 3.960 3.735 3.935 4 Dimensions In Inches Min Max 0.176 0.184 0.099 0.111 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 0.335 0.350 0.475 0.491 0.100 TYP 0.196 0.204 0.102 0.114 0.000 0.012 0.528 0.543 0.140 0.156 0.147 0.155 Rev. - 2.1