2SA1201

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. SOT-89-3L Plastic-Encapsulate Transistors 2SA1201 SOT-89-3L TRANSISTOR (PNP) 1. BASE FEATURES z High voltage z High transition frequency Complementary to 2SC2881 z MARKING 2. COLLECTOR 3. EMITTER Solid dot = Green molding compound device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.8 A PC Collector Power Dissipation 0.5 W -55~150 ℃ 250 ℃ TJ,Tstg R θJA Operation Junction and Storage Temperature Range Thermal Resistance from Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol Test conditions = V(BR)CBO IC=-1mA,IE 0 = IC=-10mA,IB 0 V (BR)CEO = V(BR)EBO IE=-1mA,IC 0 Min Typ Unit -120 V -120 V -5 V = ICBO VCB=-120V,IE 0 = IEBO VEB=-5V,IC 0 h= VCE=-5V,IC -100mA FE Max 80 -0.1 μA -0.1 μA 240 VCE(sat) = IC=-500mA,IB -50mA -1 V Base-emitter voltage = VBE VCE=-5V,IC -500mA -1 V Transition frequency = fT VCE=-5V,IC -100mA Collector output capacitance = VCB=-10V,IE 0,f 1MHz Cob = 120 MHz 30 pF CLASSIFICATION OF hFE Rank Range www.jscj-elec.com O Y 80-160 120-240 1 Rev. - 2.2 Typical Characteristics Static Characteristic -200 COMMON EMITTER T -0.9mA a=25℃ hFE (mA) -1mA IC -0.8mA DC CURRENT GAIN COLLECTOR CURRENT hFE —— IC 1000 -0.7mA -0.6mA -100 -0.5mA -0.4mA o Ta=100 C o Ta=25 C 100 -0.3mA -0.2mA -0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCE 10 -10 -10 -100 COLLECTOR CURRENT (V) VBEsat —— IC VCEsat —— -400 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCE= -5V IB=-0.1mA -800 Ta=25℃ -600 Ta=100℃ -400 IC (mA) IC β=10 -300 -200 Ta=100℃ -100 Ta=25℃ β=10 -200 -1 -10 COLLECTOR CURRENT IC —— IC -10 -100 COLLECTOR CURRENT VBE Cob / Cib 1000 —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) -600 CAPACITANCE COLLECTOR CURRENT -1 (mA) C IC (mA) -800 -0 -100 o Ta=100 C -400 Ta=25℃ Cib 100 Cob 10 -200 VCE=-5V -0 -200 -400 -600 -800 BASE-EMITTER VOLTAGE fT IC TRANSITION FREQUENCY Pc 0.6 COLLECTOR POWER DISSIPATION Pc (W) —— -1 REVERSE VOLTAGE VBE(mV) 80 fT (MHz) 100 1 -0.1 -1000 60 40 20 —— V (V) -10 -20 Ta 0.5 0.4 0.3 0.2 0.1 VCE=-5V o Ta=25 C 0 -0 -20 -40 -60 COLLECTOR CURRENT www.jscj-elec.com -80 IC 0.0 -100 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) Rev. - 2.2 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout 1.40 0.5 2.8 1.8 1.50 0 . 80 80 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.2 SOT-89-3L Tape and Reel www.jscj-elec.com 4 Rev. - 2.2