2SA1213

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage z High Speed Switching Time 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-2V, IC=-500mA 70 VCE=-2V, IC=-2A 20 240 Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-1A,IB=-50mA -1.2 V Cob Collector output capacitance fT Transition frequency 40 VCB=-10V,IE=0, f=1MHz VCE=-2V,IC= -0.5A 100 pF MHz CLASSIFICATION OF hFE RANK O Y RANGE 70–140 120–240 MARKING NO NY A,Nov,2010 Typical Characterisitics 2SA1213 Static Characteristic -1000 -5.4mA -800 IC COMMON EMITTER VCE=-2V 300 -3.6mA -600 -3mA -2.4mA -400 -1.8mA -1.2mA -200 Ta=100 ℃ hFE -4.2mA DC CURRENT GAIN COLLECTOR CURRENT —— -4.8mA IC (mA) -6mA hFE 1000 COMMON EMITTER Ta=25 ℃ Ta=25 ℃ 100 30 IB=-600uA -0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR-EMITTER VOLTAGE —— -3.5 IC β=20 -10 -3 COLLECTOR CURRENT IC -1000 —— -300 -100 -30 -10 IC -100 -30 VCEsat -1000 Ta=100 ℃ -200 -1 -3 COLLECTOR CURRENT Ta=25 ℃ BASE-EMMITTER SATURATION VOLTAGE VBEsat (mV) -1 (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) VBEsat -1000 VCE -3.0 —— -2000 (mA) IC -300 -100 Ta=100 ℃ -30 Ta=25 ℃ β=20 -10 -1000 -1 -3 -30 -10 Cob/Cib 1000 —— -300 -100 COLLECTOR CURRENT (mA) VBE -1000 -500 IC IC -1000 (mA) VCB/VEB f=1MHz IE=0/IC=0 -300 (pF) Ta=100 ℃ -30 Ta=25 ℃ -10 100 Cob 30 -3 -1 -0.0 VCE=-2V -0.2 -0.4 -0.6 BASE-EMITTER VOLTAGE PC 600 COLLECTOR POWER DISSIPATION PC (mW) Cib C -100 CAPACITANCE COLLECTOR CURRENT IC (mA) Ta=25 ℃ 300 —— -0.8 VBE -1.0 10 -0.1 -0.3 -1 -10 -3 REVERSE VOLTAGE (V) V -20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 A,Nov,2010