2SA1662

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1662 SOT-89-3L TRANSISTOR (PNP) 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.4 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. EMITTER 3 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-80V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA hFE(1) VCE=-2V,IC=-50mA 70 hFE(2) VCE=-2V,IC=-200mA 40 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob 240 IC=-200mA,IB=-20mA VCE=-2V,IC=-5mA -0.55 -0.4 V -0.8 V VCE=-10V,IC=-10mA 120 MHz VCB=-10V,IE=0,f=1MHz 14 pF CLASSIFICATION OF hFE(1) Rank Range Marking O Y 70-140 120-240 FO FY A,Jun,2011