2SA812

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T 2SA812 SOT-23 TRANSISTOR (PNP) Unit : mm 1. BASE FEATURES Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V z 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test conditions Min Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=- 60 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=- 6V, IC= -1mA Parameter Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance Typ 90 VCE=-6V, -0.58 IC= -10mA VCB=-10V,IE=0,f=1MHz Unit 600 IC=-100mA, IB= -10mA IC=-1mA, VCE=-6V Max -0.3 V -0.68 V 180 MHz 4.5 pF CLASSIFICATION OF hFE Rank Range Marking www.cj-elec.com M4 M5 M6 M7 90-180 135-270 200-400 300-600 M4 M5 M6 M7 1 C,Oct,2014 A,Jun,2014 Typical Characteristics hFE Static Characteristic -4 IC 500 o -8.1uA DC CURRENT GAIN 400 -7.2uA -6.3uA -2 -5.4uA -4.5uA -3.6uA -1 Ta=100 C hFE -9uA -3 IC (mA) COMMON EMITTER Ta=25℃ COLLECTOR CURRENT —— 600 300 o Ta=25 C 200 -2.7uA 100 -1.8uA COMMON EMITTER VCE=-6V IB=-0.9uA -0 0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE -8 -1 IC -100 VBEsat —— IC (mA) IC -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -10 COLLECTOR CURRENT (V) -100 Ta=100℃ Ta=25℃ -800 Ta=25℃ -600 Ta=100℃ β=10 β=10 -10 -400 -1 -10 -100 COLLECTOR CURRENT IC IC -1 -10 (mA) -100 COLLECTOR CURRENT —— VBE fT -100 IC (mA) —— IC 1000 -10 Ta=100℃ TRANSITION FREQUENCY COLLCETOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=-6V Ta=25℃ 100 COMMON EMITTER VCE=-6V o Ta=25 C -1 -400 10 -600 -800 BASE-EMMITER VOLTAGE Cob/ Cib —— VBE -1000 -1 -10 -100 COLLECTOR CURRENT (mV) VCB/ VEB Pc —— IC (mA) Ta 250 20 f=1MHz IE=0/ IC=0 COLLECTOR POWER DISSIPATION Pc (mW) o Ta=25 C (pF) 10 CAPACITANCE C Cib Cob 1 -0.1 150 100 50 0 -1 REVERSE VOLTAGE www.cj-elec.com 200 -10 V 0 -20 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) C,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 C,Oct,2014 A,Jun,2014