JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SB1116
SOT-23
TRANSISTOR (PNP)
FEATURES
High Collector Power Dissipation
z
z
Complementary to 2SD1616
MARKING:1116
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Symbol
1. BASE
Unit
Value
Collector-Base Voltage
-60
V
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-1
A
PC
Collector Power Dissipation
0.35
W
TJ,Tstg
Operation Junction and
Storage Temperature Range
-55-150
℃
VCBO
VCEO
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-0.1
μA
hFE(1)
VCE=-2V,IC=-0.1A
135
hFE(2)
VCE=-2V,IC=-1A
81
DC current gain
V
600
Collector-emitter saturation voltage
VCE(sat)
IC=-1A,IB=-50mA
-0.3
V
Base -emitter saturation voltage
VBE(sat)
IC=-1A,IB=-50mA
-1.2
V
-0.7
V
Base -emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
Turn-on time
ton
Storage time
ts
Fall time
tf
VCE=-2V,IC=-0.05A
VCE=-2V,IC=-0.1A
VCB=-10V,IE=0,f=1MHz
VCC=-10V,IC=-0.1A,IB1=-IB2=-0.01A,
VBE(Off)=2to3V
-0.6
70
MHz
25
pF
0.07
us
0.7
us
0.07
us
CLASSIFICATION OF hFE(1)
Rank
Range
www.jscj-elec.com
L
K
U
135-270
200-400
300-600
1
Rev. - 2.0
Typical Characteristics
Static Characteristic
-400
VCE= -2V
-300
-0.9mA
hFE
-1mA
-0.8mA
DC CURRENT GAIN
IC
(mA)
COMMON
EMITTER
Ta=25℃
COLLECTOR CURRENT
hFE —— IC
500
-0.7mA
-0.6mA
-200
-0.5mA
-0.4mA
-100
-0.3mA
o
400
Ta=100 C
300
200
o
Ta=25 C
100
-0.2mA
IB=-0.1mA
-0
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
-0.1
VBEsat —— IC
-1
-800
Ta=25℃
-600
Ta=100℃
-400
-10
COLLECTOR CURRENT
VCEsat ——
-400
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-1000
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-6
(V)
VCE
IC
-100
-1000
(mA)
IC
β=20
-300
-200
Ta=100℃
-100
Ta=25℃
β=20
-200
-1
-0
-10
-100
COLLECTOR CURRENT
IC ——
-1000
IC
-1000
-1
-10
(mA)
-100
COLLECTOR CURRENT
VBE
Cob / Cib
1000
——
IC
-1000
(mA)
VCB / VEB
IC (mA)
f=1MHz
IE=0 / IC=0
o
C
COLLECTOR CURRENT
Ta=25 C
(pF)
-800
CAPACITANCE
-600
o
Ta=100 C
-400
Ta=25℃
Cib
100
Cob
10
-200
VCE=-2V
-0
-200
-400
-600
-800
BASE-EMITTER VOLTAGE
fT
IC
TRANSITION FREQUENCY
Pc
0.5
COLLECTOR POWER DISSIPATION
Pc (W)
——
-1
-10
REVERSE VOLTAGE
VBE(mV)
150
fT
(MHz)
200
1
-0.1
-1000
100
50
——
V
(V)
-20
Ta
0.4
0.3
0.2
0.1
VCE=-2V
o
Ta=25 C
0
0.0
-0
-20
-40
-60
COLLECTOR CURRENT
www.jscj-elec.com
-80
IC
-100
0
25
50
75
AMBIENT TEMPERATURE
(mA)
2
100
Ta
125
150
(℃ )
Rev. - 2.0
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
3
Rev. - 2.0
SOT-23 Tape and Reel
www.jscj-elec.com
4
Rev. - 2.0
很抱歉,暂时无法提供与“2SB1116”相匹配的价格&库存,您可以联系我们找货
免费人工找货