2SB1261-Z

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SB1261-Z TO-251-3L TRANSISTOR (PNP) FEATURES z z 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -3 A PD Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -7 V Collector cut-off current ICBO VCB=-60V, IE=0 -10 µA Emitter cut-off current IEBO VEB=-7V, IC=0 -10 µA hFE(1) VCE=-2V, IC=-200mA 60 hFE(2) VCE=-2V, IC=-600mA 100 hFE(3) VCE=-2V, IC=-2A 50 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=-1.5A, IB=-150mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-1.5A, IB=-150mA -1.2 V Transition frequency fT Collector output capacitance Switching Time Cob Turn on Time ton Storage Time tstg Fall Time tf VCE=-5V, IC=-1.5A 50 MHz VCB=-10V, IE=0, f=1MHz 40 pF VCC=-10V, IC=-1A, IB1=-IB2=-0.1A, RL=10Ω 0.5 µs 2.0 0.5 CLASSIFICATION OF h FE(2) Rank Range www.cj-elec.com M L K 100-200 160-320 200-400 1 D,Nov,2014 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 2 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 D,Nov,2014