JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1386
TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z
Low collector saturation voltage
z
Execllent current-to-gain characteristics
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
3. EMITTER
Value
Unit
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-6
V
IC
Continuous Collector Current
-5
A
ICP*
Pulsed Collector Current
-10
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
*Single pulse,PW=10ms
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.5
μA
DC current gain
hFE
VCE=-2V,IC=-500mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
Collector output capacitance
Cob
82
390
IC=-4A,IB=-100mA
-1
V
VCE=-6V,IC=-50mA,f=30MHz
120
MHz
VCB=-20V,IE=0,f=1MHz
60
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
Q
R
82-180
120-270
180-390
BHP
BHQ
BHR
B,Dec,2011
2SB1386
Typical Characterisitics
Static Characteristic
IC
Ta=100℃
-4mA
400
hFE
-3.6mA
-3.2mA
-0.9
DC CURRENT GAIN
COLLECTOR CURRENT
——
VCE=-2V
COMMON
EMITTER
Ta=25℃
-1.2
hFE
500
IC
(A)
-1.5
-2.8mA
-2.4mA
-2mA
-0.6
-1.6mA
Ta=25℃
300
200
-1.2mA
-0.3
100
-0.8mA
IB=-0.4mA
0
-1E-3
-0.0
-0
-1
-2
-3
COLLECTOR-EMITTER VOLTAGE
VCEsat
-0.8
——
VCE
(V)
IC
-0.1
VBEsat
-1.6
-1
——
IC
-3
(A)
IC
β=40
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=40
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-0.01
COLLECTOR CURRENT
-0.6
-0.4
Ta=100℃
-0.2
-1.2
Ta=25℃
-0.8
Ta=100℃
-0.4
Ta=25℃
-0.0
-1E-3
-0.01
-0.1
COLLECTOR CURRENT
IC
-5
IC
-0.0
-1E-3
-5
-1
(A)
-0.01
-0.1
-1
COLLECTOR CURRENT
—— VBE
1000
Cob/ Cib
——
IC
-5
(A)
VCB/ VEB
Ta=25℃
-1
Cib
(pF)
Ta=100℃
-0.01
-1E-3
-0.2
VCE=-2V
-0.4
-0.6
-0.8
BASE-EMMITER VOLTAGE
Pc
1.0
COLLECTOR POWER DISSIPATION
Pc (W)
Cob
C
Ta=25℃
-0.1
CAPACITANCE
COLLCETOR CURRENT
IC
(A)
f=1MHz
IE=0/ IC=0
——
-1.0
VBE
-1.2
100
10
-0.1
-1
REVERSE VOLTAGE
(V)
-10
V
-20
(V)
Ta
0.8
0.6
0.4
0.2
0.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150
B,Dec,2011
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