2SC1384

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC(T 2SC1383 2SC1384 TRANSISTOR (NPN) TO-92L FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). Complementary Pair with 2SA0683 and 2SA0684. z 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Unit VCBO Collector-Base Voltage 30 60 V VCEO Collector-Emitter Voltage 25 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 1 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3.BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage 2SC1383 Test conditions Min Typ Max Unit 30 V(BR)CBO IC=10μA ,IE=0 V(BR)CEO IC=2mA , IB=0 Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 Collector cut-off current ICBO VCB=20V, IE=0 hFE(1) VCE=10V, IC=500mA 85 hFE(2) VCE=5V, IC=1A 50 Collector-emitter saturation voltage VCE(sat) IC=500m A,IB=50mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V 2SC1384 Collector-emitter breakdown voltage 2SC1383 2SC1384 V 60 25 V 50 5 V 0.1 μA 340 DC current gain VCE=10V,IC=50mA fT Transition frequency 200 MHz CLASSIFICATION OF hFE(1) Rank Range www.cj-elec.com Q R S 85-170 120-240 170-340 1 C,Oct,2014 A,Jun,2014 Symbol A A1 b b1 c D D1 E e e1 L Φ h www.cj-elec.com 2 Dimensions In Millimeters Min Max 3.700 4.100 1.280 1.580 0.350 0.550 0.600 0.800 0.350 0.450 4.700 5.100 4.000 7.800 8.200 1.270 TYP 2.440 2.640 13.800 14.200 1.600 0.000 0.300 Dimensions In Inches Min Max 0.146 0.161 0.050 0.062 0.014 0.022 0.024 0.031 0.014 0.018 0.185 0.201 0.157 0.307 0.323 0.050 TYP 0.096 0.104 0.543 0.559 0.063 0.000 0.012 C,Oct,2014 www.cj-elec.com 3 C,Oct,2014