2SC2060

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC(T 2SC2060 TRANSISTOR (NPN) TO-92L FEATURE 1. EMITTER z Power Dissipation PCM: 0.75 W (Ta=25℃) z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter voltage Value Unit 40 V VCBO Collector-base VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=20V , IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V , IC=0 0.1 μA hFE VCE=3V, DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance www.cj-elec.com VCE(sat) fT Cob IC= 100mA 80 IC= 500m A, IB= 50mA VCE=5V, IE=-50mA VCB=10V,IE=0,f=1MHz 1 400 0.4 50 V MHz 30 pF A,Jun,2014 C,Mar,2016 Symbol A A1 b b1 c D D1 E e e1 L Φ h www.cj-elec.com 2 Dimensions In Millimeters Min. Max. 3.750 4.050 1.280 1.580 0.380 0.550 0.620 0.780 0.350 0.450 4.750 5.050 4.000 7.850 8.150 1.270 TYP. 2.440 2.640 13.800 14.200 1.600 0.000 0.300 Dimensions In Inches Min. Max. 0.148 0.159 0.050 0.062 0.015 0.022 0.024 0.031 0.014 0.018 0.187 0.199 0.157 0.309 0.321 0.050 TYP. 0.096 0.104 0.543 0.559 0.063 0.000 0.012 C,Mar,2016 www.cj-elec.com 3 C,Mar,2016