2SC2120

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) TO – 92 FEATURES z High DC Current Gain z Complementary to 2SA950 1. EMITTER 2. COLLECTOR 3. BASE  Equivalent Circuit C2120 'HYLFHFRGH  Solid dot=Green molding compound device, C2120 z if none,the normal device XXX ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2SC2120 TO-92 Bulk 1000pcs/Bag 2SC2120-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit V V CBO Collector-Base Voltage 35 V CEO Collector-Emitter Voltage 30 V V EBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Power Dissipation 600 mW Thermal Resistance From Junction To Ambient 208 ℃ /W -55~+150 ℃ R θ JA TJ,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage 5 V(BR)EBO IE=0.1mA,IC=0 Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Collector cut-off current ICEO VCE=25V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=1V, IC=100mA VCE(sat) IC=500mA,IB=20mA 0.5 V Collector-emitter saturation voltage V 100 320 Base-emitter voltage VBE VCE=1V, IC=10mA 0.8 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 13 pF Transition frequency fT VCE=5V,IC=10mA 100 MHz CLASSIFICATION OF hFE RANK O Y RANGE 100-200 160-320 www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Static Characteristic 200 1mA hFE DC CURRENT GAIN COLLECTOR CURRENT 120 IC Ta=100℃ 600uA IC (mA) 700uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 800uA 160 hFE 1000 900uA 500uA 400uA 80 300uA Ta=25℃ 100 200uA 40 IB=100uA 0 0.0 10 0.4 0.8 1.2 1.6 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 IC VBEsat 2 β=25 100 IC 800 300 (mA) IC —— β=25 300 100 Ta=100℃ Ta=25℃ 30 1 Ta=25℃ Ta=100℃ 0.1 1 10 3 IC 800 300 100 30 COLLECTOR CURRENT IC 800 1 3 30 10 (mA) —— VBE Cob/ Cib 100 —— 300 100 COLLECTOR CURRENT IC VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (mA) 800 (mA) COMMON EMITTER VCE=1V 300 30 30 C 100 (pF) Ta=100℃ CAPACITANCE IC 30 10 COLLECTOR CURRENT 10 COLLECTOR CURRENT 3 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 2.0 Ta=25℃ 10 Cob 10 3 3 1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 500 1 0.3 —— IC PC 800 10 3 REVERSE VOLTAGE BASE-EMITER VOLTAGE V BE (V) V 20 (V) —— Ta VCE=5V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) Ta=25℃ 100 10 600 400 200 0 1 3 COLLECTOR CURRENT www.jscj-elec.com 30 10 IC 100 0 (mA) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) Rev. - 2.0 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.146 0.130 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 TO-92 7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0