2SC2881

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2881 TRANSISTOR (NPN) 1. BASE FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Complementary to 2SA1201 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=120V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA DC current gain hFE VCE=5V, IC=100mA Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance 80 240 IC=500mA,IB=50mA 1 V VCE=5V, IC=0.5A 1 V VCE=5V,IC=100mA VCB=10V, IE=0, f=1MHz 120 MHz 30 pF CLASSIFICATION OF hFE RANK O Y RANGE 80–160 120–240 MARKING CO1 CY1 A,Nov,2010