2SC2983

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-251-3L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-251-3L FEATURES z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER  Equivalent Circuit C2983 XXXX C2983 'HYLFHFRGH 6ROLGGRW *UHHQPROGLQQFRPSRXQGGHYLFH  LIQRQHWKHQRUPDOGHYLFH XXXX=Code MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V 1.5 A 1 W 125 ℃/W -55~+150 ℃ IC Collector Current PC Collector Power Dissipation RθJA TJ,Tstg www.jscj-elec.com Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range 1 Rev. - 2.1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test conditions Min Typ Max Unit IC=1mA,IE=0 160 V IC=10mA,IB=0 160 V IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=160V,IE=0 1 μA Emitter cut-off current IEBO VEB=5V,IC=0 1 μA DC current gain hFE VCE=5V, IC=100mA VCE(sat) IC=500mA,IB=50mA 1.5 V Base-emitter voltage VBE VCE=5V, IC=500mA 1 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 25 pF VCE=10V,IC=100mA, 100 MHz Collector-emitter saturation voltage Transition frequency fT 70 240 *Pulse test CLASSIFICATION OF hFE RANK O Y RANGE 70-140 120-240 www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Static Characteristic 200 hFE 1000 1mA 150 Ta=100℃ DC CURRENT GAIN IC 0.9mA COLLECTOR CURRENT IC COMMON EMITTER VCE= 5V hFE (mA) COMMON EMITTER Ta=25℃ —— 0.8mA 0.7mA 100 0.6mA 0.5mA 0.4mA Ta=25℃ 100 50 0.3mA 0.2mA IB=0.1mA 0 10 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 10 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ 600 Ta=100 ℃ 400 200 1 10 100 COLLECTOR CURREMT IC IC —— IC Ta=100 ℃ 100 Ta=25℃ 10 1 0.1 1000 1500 1 10 COLLECTOR CURREMT (mA) VBE fT 500 1500 1000 COMMON EMITTER VCE=5V (mA) IC Ta=25℃ TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a IC fT 100 —— 1000 1500 100 IC COMMON EMITTER VCE=10V (MHz) (mA) —— (mA) β=10 0 0.1 10 1 100 0.1 0 200 400 600 800 1000 10 50 1200 60 Cob/Cib —— VCB/VEB f=1MHz IE=0/IC=0 Cib C 100 Cob 10 —— 90 IC 100 (mA) Ta 800 600 400 200 0 1 REVERSE VOLTAGE www.jscj-elec.com 80 1000 Ta=25 ℃ 1 0.1 PC 1200 COLLECTOR POWER DISSIPATION PC (mW) 1000 70 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) (pF) IC 300 800 CAPACITANCE 1000 1500 100 VCEsat IC β=10 COLLECTOR CURRENT 10 COLLECTOR CURRENT VCE (V) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 3 100 Ta 125 150 (℃ ) Rev. - 2.1 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.jscj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 4 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 Rev. - 2.1