2SC2983

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V 1.5 A 1 W Thermal Resistance From Junction To Ambient 125 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ IC Collector Current PC Collector Power Dissipation RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test conditions Min Typ Max Unit IC=1mA,IE=0 160 V IC=10mA,IB=0 160 V IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=160V,IE=0 1 μA Emitter cut-off current IEBO VEB=5V,IC=0 1 μA DC current gain hFE VCE=5V, IC=100mA VCE(sat) IC=500mA,IB=50mA 1.5 V Base-emitter voltage VBE VCE=5V, IC=500mA 1 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 25 pF VCE=10V,IC=100mA, 100 MHz Collector-emitter saturation voltage Transition frequency fT 70 240 *Pulse test CLASSIFICATION OF hFE RANK O Y RANGE 70-140 120-240 B,Aug,2012 Typical Characteristics 2SC2983 Static Characteristic 200 hFE 1000 1mA 150 0.8mA 0.7mA 100 0.6mA 0.5mA 0.4mA 50 Ta=100℃ DC CURRENT GAIN IC 0.9mA COLLECTOR CURRENT IC COMMON EMITTER VCE= 5V hFE (mA) COMMON EMITTER Ta=25℃ —— Ta=25℃ 100 0.3mA 0.2mA IB=0.1mA 0 10 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 10 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ 600 Ta=100 ℃ 400 200 1 10 100 COLLECTOR CURREMT IC —— IC Ta=100 ℃ Ta=25℃ 10 1 0.1 1000 1500 1 10 COLLECTOR CURREMT (mA) VBE fT 500 COMMON EMITTER VCE=5V (mA) IC Ta=25℃ TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a IC fT 100 —— 1000 1500 100 IC COMMON EMITTER VCE=10V (MHz) (mA) IC 100 1 100 0.1 0 200 400 600 800 1000 10 50 1200 60 Cob/Cib —— VCB/VEB f=1MHz IE=0/IC=0 Cib 100 C 80 —— 90 IC 100 (mA) Ta 1000 Ta=25 ℃ Cob 10 1 0.1 PC 1200 COLLECTOR POWER DISSIPATION PC (mW) 1000 70 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) (pF) 1000 1500 (mA) β=10 0 0.1 CAPACITANCE —— IC 300 800 1500 1000 100 VCEsat IC β=10 COLLECTOR CURRENT 10 COLLECTOR CURRENT VCE (V) 800 600 400 200 0 1 REVERSE VOLTAGE 10 V (V) 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 B,Aug,2012