2SC3052

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3052 SOT-23 TRANSISTOR (NPN) FEATURES z z 1. BASE Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 150 mW TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Test conditions Symbol Collector-base breakdown voltage V (BR) CBO IC = 100 μA, Collector-emitter breakdown voltage V (BR) CEO Emitter-base breakdown voltage Min Max Unit 50 V IC = 100 μA, IB=0 50 V V (BR) EBO IE= 100 μA, IC=0 6 V Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 μA hFE(1) VCE= 6V, IC= 1mA 150 VCE= 6V, IC= 0.1mA 50 DC current gain hFE(2) IE=0 800 Collector-emitter saturation voltage VCE (sat) IC=100mA, IB= 10mA 0.3 V Base-emitter saturation voltage VBE (sat) IC= 100mA, IB= 10mA 1 V fT Transition frequency VCE= 6V, IC= 10mA Collector output capacitance Cob VCB=6V, IE=0, f=1MHz Noise figure NF VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ 180 MHz 4 pF 15 dB CLASSIFICATION OF hFE(1) Rank Range Marking www.jscj-elec.com E F G 150~300 250~500 400~800 LE LF LG 1 Rev. - 2.0 Typical Characteristics Static Characteristic VCE=6V COMMON EMITTER Ta=25℃ 10uA (mA) hFE —— IC 1000 9uA o Ta=100 C hFE 2.0 1.5 DC CURRENT GAIN COLLECTOR CURRENT IC 8uA 7uA 6uA 1.0 5uA 4uA o Ta=25 C 100 3uA 0.5 2uA IB=1uA 0.0 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE 8 VCE 9 10 0.1 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ 0.6 Ta=100℃ 0.4 (mA) IC β=10 200 Ta=100℃ 100 Ta=25℃ 0 1 10 100 COLLECTOR CURRENT fT 400 —— IC 1 150 (mA) 10 100 COLLECTOR CURRENT Cob / Cib IC —— IC 150 (mA) VCB / VEB (MHz) f=1MHz IE=0 / IC=0 (pF) o Ta=25 C 10 C fT 300 Cib CAPACITANCE TRANSITION FREQUENCY 100 150 IC 300 β=10 0.8 10 VCEsat —— VBEsat —— IC 1.0 1 COLLECTOR CURRENT (V) 200 Cob 100 VCE=6V o Ta=25 C 0 1 10 COLLECTOR CURRENT Pc —— 1 0.1 100 IC 1 REVERSE VOLTAGE (mA) 10 V 20 (V) Ta COLLECTOR POWER DISSIPATION Pc (mW) 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 2 Rev. - 2.0 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-23 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0