JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SC4373
TRANSISTOR (NPN)
1. BASE
FEATURES
z Small Flat Package
z Large Current Capacity
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
800
mA
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
-55~+150
℃
RθJA
TJ,Tstg
Operation Junction and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=1mA,I
=E 0
120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,I
=B 0
120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA,I
=C 0
5
V
Collector cut-off current
ICBO =
VCB=120V,IE 0
0.1
µA
Emitter cut-off current
=
VEB=5V,IC 0
IEBO
0.1
µA
DC current gain
hFE
=
VCE=5V, IC 100mA
80
240
VCE(sat)
IC=500mA,IB=50mA
1
V
Base-emitter voltage
VBE
=
VCE=5V, IC 500mA
1
V
Transition frequency
fT
VCE=5V,IC=500mA
Collector-emitter saturation voltage
Collector output capacitance
Cob
120
VCB=10V, IE=0, f=1MHz
MHz
30
pF
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
80–160
120–240
MARKING
CO
CY
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1
Rev. - 2.0
Typical Characteristics
Static Characteristic
COMMON
EMITTER
Ta=25℃
——
IC
COMMON EMITTER
VCE=5V
1.8mA
1.6mA
250
hFE
300
hFE
1000
2.0mA
1.4mA
200
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
350
1.2mA
1.0mA
150
0.8mA
100
0.6mA
Ta=100℃
Ta=25℃
100
0.4mA
50
IB=0.2mA
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
——
IC
Ta=100 ℃
Ta=25℃
β=10
1
10
100
COLLECTOR CURRENT
IC
800
——
IC
(mA)
VBE
IC
IC
600
Ta=100 ℃
400
β=10
1
1000
10
COLLECTOR CURRENT
Cob/Cib
——
IC
(pF)
800
100
(mA)
VCB/VEB
f=1MHz
IE=0/IC=0
Ta=25 ℃
Cib
100
CAPACITANCE
T =1
00 ℃
a
T =2
5℃
a
C
100
800
(mA)
Ta=25℃
(mA)
IC
COLLECTOR CURRENT
100
800
200
800
10
COLLECTOR CURRENT
VBEsat ——
1000
100
10
1
VCE (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
VCEsat
400
10
8
10
Cob
10
COMMON EMITTER
VCE=5V
1
200
400
600
800
1
0.1
1000
PC
COLLECTOR POWER DISSIPATION
PC (mW)
600
——
1
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (mV)
10
V
20
(V)
Ta
500
400
300
200
100
0
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
150
(℃ )
2
Rev. - 2.0
SOT-89-3L Package Outline Dimensions
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
1.400
0.950
45°
1.600
2.200
1.300
0.700
0.900
0.800
1.500
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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3
Rev. - 2.0
SOT-89-3L Tape and Reel
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4
Rev. - 2.0
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