2SC5658

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate 2SC5658 Transistors General purpose transistors (NPN) SOT-723 FEATURES z Low Cob z Complements the 2SA2029 1. BASE 2. EMITTER 3. COLLECTOR Marking: BQ,BR,BS Absolute maximum ratings (Ta=25 ℃unless otherwise noted) Symbol Parameter Limit Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage IC PC TJ,Tstg Collector Current -Continuous Collector Dissipation Operation Junction and Storage Temperature Range 7 V 150 mA 100 mW -55~+150 ℃ Electrical characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA hFE VCE=6V,IC=1mA DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) fT Cob 120 560 IC=50mA,IB=5mA 0.4 VCE=12V,IC=2mA, f=100MHz VCB=12V,IE=0, f=1MHz 180 V MHz 3.5 pF Classification of hFE Rank Q R S Range 120~270 180~390 270~560 www.jscj-elec.com 1 Rev. - 2.0 Typical Characteristics Static Characteristic 7 hFE 1000 COMMON EMITTER Ta=25℃ 20uA 6 Ta=100℃ 16uA Ta=25℃ DC CURRENT GAIN IC 5 COLLECTOR CURRENT 14uA 4 12uA 10uA 3 IC hFE (mA) 18uA —— 8uA 2 6uA 100 4uA 1 COMMON EMITTER VCE= 6V IB=2uA 0 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE VBEsat —— 10 0.1 8 1 VCEsat IC 100 150 10 COLLECTOR CURRENT —— IC (mA) IC 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 2000 7 VCE (V) 1000 Ta=25℃ Ta=100 ℃ 100 Ta=100 ℃ Ta=25℃ β=10 100 0.1 1 COLLECTOR CURREMT IC —— IC β=10 10 0.1 100 150 10 1 10 COLLECTOR CURREMT (mA) VBE fT 1000 150 —— IC 100 150 (mA) IC TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) 100 COMMON EMITTER VCE=6V 1 0.0 100 COMMON EMITTER VCE=12V Ta=25℃ 10 0.3 0.6 0.9 1.2 1 10 50 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ 10 Cob 1 —— IC (mA) Ta 100 75 50 25 0 1 REVERSE VOLTAGE www.jscj-elec.com PC 125 f=1MHz IE=0/IC=0 0.1 0.1 100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) 10 V 0 20 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) Rev. - 2.0 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 b b1 c D E E1 e  Dimensions In Millimeters Min. Max. 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Dimensions In Inches Max. Min. 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. 6276XJJHVWHG3DG/D\RXW NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 6277DSHDQG5HHO www.jscj-elec.com 4 Rev. - 2.0