2SC5785

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC5785 TRANSISTOR（NPN） SOT-89-3L FEATURES 1 2 3 z High-Speed Switching Applications z DC-DC Converter Applications z Strobe Applications 1. BASE 1 2. COLLETOR 2 3 3. EMITTER Marking: 3E MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 2 A ICP Collector Current –Pulse 3.5 A IB Base Current 0.2 A PC Collector Power Dissipation 0.5 W RӨJA Thermal Resistance, junction to Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA , IB=0 10 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 7 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V, IC=0 0.1 μA hFE1 VCE=2V, IC=0.2A 400 hFE2 VCE=2V, IC=0.6A 200 DC current gain 1000 Collector-emitter saturation voltage VCE(sat) IC= 0.6A, IB=12mA 0.12 V Base-emitter saturation voltage VBE(sat) IC= 0.6A, IB=12mA 1.1 V Rise time tr See Figure 1 circuit diagram. 60 ns Storage time tS VCC≈6V, RL=10Ω, 215 ns Fall time tf IB1=-IB2=12mA 25 ns www.cj-elec.com 1 C,Oct,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 2 C,Oct,2015 SOT-89-3L Tape and Reel www.cj-elec.com 3 C,Oct,2015