2SD1138

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD1138 TRANSISTOR (NPN) TO-220-3L FEATURES  Low Frequency Power Amplifier Color 1. BASE TV Vertical Deflection Output 2. COLLECTOR 3. EMITTER Equivalent Circuit  2SD1138 'HYLFHFRGH 6ROLGGRW *UHHQPROGLQQFRPSRXQGGHYLFH  LIQRQHWKHQRUPDOGHYLFH XXXX=Code 2 S D 11 3 8 XXXX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Collector Power Dissipation 1.8 W Thermal Resistance from Junction to Ambient 69 ℃/W -55~+150 ℃ RθJA Tj,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 Rev. - 2.1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltag V(BR)CBO IC=5mA, IE=0 200 V Collector-emitter breakdown voltage V(BR)CEO IC=50mA,IB=0 150 V Emitter-base breakdown voltage V(BR)EBO IE=5mA,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 1 μA Emitter cut-off current IEBO VEB=5V,IC=0 1 μA DC current gain Collector-emitter saturation voltage hFE（1） VCE=4V, IC=50mA 60 hFE（2） VCE=10V, IC=500mA 60 VCE(sat) IC=500mA,IB=50mA 3 V 1 V Base-emitter voltage VBE VCE=4V, IC=50mA Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 200 30 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK B C RANGE 60-120 100-200 www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Static Characteristic 100 COMMON EMITTER Ta=25℃ 0.8mA hFE (mA) 0.9mA 70 IC 0.7mA 60 0.6mA 50 0.5mA 40 Ta=100℃ 100 DC CURRENT GAIN COLLECTOR CURRENT —— 1mA 80 IC 90 hFE 1000 0.4mA 30 Ta=25℃ 10 0.3mA 20 0.2mA 10 COMMON EMITTER VCE=4V IB=0.1mA 0 1 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE VCEsat 320 —— 8 VCE 9 10 1 10 100 COLLECTOR CURRENT (V) IC VBEsat 1200 1000 IC 2000 (mA) IC —— 1100 1000 240 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 280 Ta=100℃ 200 160 120 80 Ta=25℃ 40 100 1000 COLLECTOR CURRENT IC 2000 IC Ta=25℃ 800 700 600 500 Ta=100℃ 400 300 200 100 β=10 0 10 900 β=10 0 2000 1 10 100 COLLECTOR CURRENT (mA) —— VBE 10000 Cob/ Cib 1000 IC —— VCB/ VEB COMMON EMITTER VCE=4V 1000 2000 (mA) f=1MHz IE=0/IC=0 (pF) C 100 CAPACITANCE T= a 25 ℃ T= a 10 0℃ COLLCETOR CURRENT IC (mA) Ta=25℃ Cib 1000 10 1 0 100 200 700 800 900 BASE-EMMITER VOLTAGE VBE (mV) 300 400 PC 2400 500 600 —— 1000 1100 100 10 1 0.1 1200 Cob 1 REVERSE VOLTAGE 10 V 30 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) 2100 1800 1500 1200 900 600 300 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 3 Rev. - 2.1 TO-220-3L Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F h L L1 Φ www.jscj-elec.com Dimensions In Millimeters Min Max 4.670 4.470 2.520 2.820 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 12.060 12.460 2.540 TYP 4.980 5.180 2.590 2.890 0.000 0.300 13.400 13.800 3.560 3.960 3.735 3.935 4 Dimensions In Inches Min Max 0.176 0.184 0.099 0.111 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 0.335 0.350 0.475 0.491 0.100 TYP 0.196 0.204 0.102 0.114 0.000 0.012 0.528 0.543 0.140 0.156 0.147 0.155 Rev. - 2.1