JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
SOT-89-3L Plastic-Encapsulate Transistors
2SD1766
SOT-89-3L
TRANSISTOR (NPN)
1. BASE
FEATURES
z
Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
z
Complements to 2SB1188
2. COLLECTOR
MARKING
3. EMITTER
DBP
DBQ
DBR
Solid dot = Green molding
compound device.
℃ unless otherwise noted)
MAXIMUM RATINGS (T =25
a
Symbol
Parameter
Value
Unit
VCBO
Collector-Base
Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector dissipation
500
mW
TJ,Tstg
Operation Junction and
Storage Temperature Range
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=20V, IE=0
1
μA
Emitter cut-off current
IEBO
VEB=4V, IC=0
1
μA
DC current gain
hFE(1)
VCE=3V, IC=500mA
VCE(sat)
Collector-emitter saturation voltage
fT
Transition frequency
Cob
Collector output capacitance
82
390
IC=2A, IB=0.2A
0.8
V
VCE=5V, IC=50mA, f=100MHz
100
MHz
VCB=10V, IE=0, f=1MHz
30
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
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P
Q
R
82-180
120-270
180-390
DBP
DBQ
DBR
1
Rev. - 2.2
Typical Characteristics
Static Characteristic
700
hFE
1000
COMMON
EMITTER
Ta=25℃
Ta=100℃
2.0mA
1.8mA
IC
500
400
1.4mA
1.2mA
300
Ta=25℃
DC CURRENT GAIN
1.6mA
COLLECTOR CURRENT
IC
hFE
(mA)
600
——
1.0mA
0.8mA
200
100
0.6mA
0.4mA
100
COMMON EMITTER
VCE= 3V
IB=0.2mA
0
10
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
5
1
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
600
Ta=100 ℃
400
200
1
10
100
COLLECTOR CURREMT
IC
VBE ——
IC
Ta=100 ℃
100
Ta=25℃
10
1
0.1
1000 2000
1
10
IC
fT
1000
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
10
1
100
10
0.3
0.6
0.9
1.2
5
10
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25 ℃
C
100
Cob
10
——
IC
(mA)
Ta
400
200
0
1
REVERSE VOLTAGE
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PC
600
Cib
100
40
COLLECTOR CURRENT
f=1MHz
IE=0/IC=0
1
0.1
IC
Ta=25℃
BASE-EMMITER VOLTAGE VBE (V)
1000
(mA)
fT
(mA)
IC
100
0.1
0.0
——
IC
COMMON EMITTER
VCE=5V
(MHz)
COMMON EMITTER
VCE=3V
1000 2000
100
COLLECTOR CURREMT
(mA)
2000
COLLECTOR CURRENT
——
2000
(mA)
β=10
Ta=25℃
0
0.1
(pF)
1000
IC
300
800
CAPACITANCE
100
IC
β=10
1000
10
COLLECTOR CURRENT
VCE (V)
10
V
0
30
25
50
75
AMBIENT TEMPERATURE
(V)
2
100
Ta
125
150
(℃ )
Rev. - 2.2
SOT-89-3L Package Outline Dimensions
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
1.40
0.5
2.8
1.8
1.50
0 . 80
80
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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3
Rev. - 2.2
SOT-89-3L Tape and Reel
www.jscj-elec.com
4
Rev. - 2.2
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