2SD1899-Z

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES z High hFE z Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2.COLLECTOR Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3.EMITTER ELECTRICAL CHAR ACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 10 μA Emitter cut-off current IEBO VEB=7V,IC=0 10 μA hFE(1) VCE=2V,IC=200mA 60 hFE(2) VCE=2V,IC=600mA 100 hFE(3) VCE=2V,IC=2A 50 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=1.5A,IB=150mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=1.5A,IB=150mA 1.2 V Transition frequency fT Collector output capacitance Switching Time Cob Turn on Time ton Storage Time tstg Fall Time VCE=5V,IC=1.5A 120 MHz VCB=10V,IE=0,f=1MHz 30 pF 0.5 VCC=10V,IC=1A,IB1=-IB2=-0.1A 2.0 μs 0.5 tf CLASSIFICATION OF h FE(2) Rank Range www.cj-elec.com M L K 100-200 160-320 200-400 1 D,Nov,2014 Typical Characteristics Static Characteristic 8.1mA 7.2mA 5.4mA 4.5mA 3.6mA 2.7mA 500 IC Ta=100℃ 200 DC CURRENT GAIN 6.3mA 1000 —— COMMON EMITTER VCE= 2V 9.0mA COMMON EMITTER Ta=25℃ (mA) IC COLLECTOR CURRENT hFE 300 hFE 1500 Ta=25℃ 100 1.8mA IB=0.9mA 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 1200 VBEsat —— 5 VCE 0 0.01 6 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ 800 Ta=100℃ 600 0.1 1 1000 Cob / Cib —— IC IC Ta=25℃ 0.01 0.1 1 PC —— IC 3 (A) Ta f=1MHz IE=0 / IC=0 Ta=25℃ (pF) C CAPACITANCE 3 Ta=100℃ 1.2 100 Cob 10 1.0 0.8 0.6 0.4 0.2 0.0 1 REVERSE VOLTAGE www.cj-elec.com —— 1 (A) COLLECTOR CURRENT VCB / VEB Cib 1 0.1 100 10 3 IC β=10 (A) COLLECTOR POWER DISSIPATION PC (W) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 1000 COLLECTOR CURRENT VCEsat 1000 β=10 400 0.01 0.1 COLLECTOR CURRENT (V) 10 V 0 20 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 - Ta 125 150 (℃ ) D,Nov,2014 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 3 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 D,Nov,2014