2SD1899

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES z Low VCE(sat) z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A PC Collector Power Dissipation 1 W Thermal Resistance From Junction To Ambient 125 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 10 μA Emitter cut-off current IEBO VEB=7V,IC=0 10 μA DC current gain hFE(1)* VCE=2V, IC=0.2A 60 * hFE(2) VCE=2V, IC=0.6A 100 VCE=2V, IC=2A 50 hFE(3)* 400 Collector-emitter saturation voltage VCE(sat) * IC=1.5A,IB=0.15A 0.25 V Base-emitter saturation voltage * VBE(sat) IC=1.5A,IB=0.15A 1.2 V Cob Collector output capacitance fT Transition frequency VCB=10V,IE=0, f=1MHz 30 pF VCE=5V,IC=1.5A 120 MHz *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(2) RANK M L K RANGE 100-200 160-320 200-400 www.cj-elec.com 1 D,Mar,2016 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ COMMON EMITTER VCE= 2V 9.0mA 8.1mA 1500 7.2mA hFE (mA) IC COLLECTOR CURRENT hFE —— IC 400 6.3mA DC CURRENT GAIN 2000 5.4mA 4.5mA 1000 3.6mA 2.7mA 500 Ta=100℃ 300 Ta=25℃ 200 100 1.8mA IB=0.9mA 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 1200 VBEsat —— 5 VCE 0 0.01 6 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ Ta=100℃ 600 0.1 1 COLLECTOR CURRENT 1000 Cob / Cib —— IC Ta=25℃ (pF) C CAPACITANCE Cob 1 REVERSE VOLTAGE www.cj-elec.com Ta=25℃ 0.01 0.1 PC 1.2 10 1 0.1 Ta=100℃ 1 —— IC 3 (A) Ta f=1MHz IE=0 / IC=0 Cib 100 3 IC COLLECTOR CURRENT VCB / VEB 1 (A) 100 10 3 IC β=10 (A) COLLECTOR POWER DISSIPATION PC (W) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 1000 400 0.01 VCEsat —— 1000 β=10 800 0.1 COLLECTOR CURRENT (V) 10 V 1.0 0.8 0.6 0.4 0.2 0.0 20 0 (V) 2 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 150 D,Mar,2016 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Max. Min. 2.380 2.200 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF.   3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF.   D,Mar,2016 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 D,Mar,2016