2SD2150

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR (NPN) SOT-89-3L FEATURES z Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) z VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 1. BASE 2. COLLECTOR 3. EMITTER MARKING CFR CFS 180-390 270-560 Solid dot = Green molding compound device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 500 mW TJ,Tstg Operation Junction and Storage Temperature Range -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =50uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 6 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE * Collector-emitter saturation voltage VCE(sat) Transition frequency fT* Collector output capacitance Cob VCE=2V, IC=100mA * 180 560 IC=2A, IB=100mA VCE=2V,IC=500mA f=100MHz VCB=10V, IE=0, f=1MHz 0.5 V 290 MHz 25 pF *Pulse test: tp≤300μS, δ≤0.02. CLASSIFICATION OF hFE Rank Range Marking www.jscj-elec.com R S 180-390 270-560 CFR CFS 1 Rev. - 2.2 Typical Characteristics 1000 500uA IC hFE 400uA IC 350uA 120 300uA 250uA 80 200uA 150uA 40 Ta=100℃ DC CURRENT GAIN (mA) 160 —— COMMON EMITTER VCE=2V COMMON EMITTER Ta=25℃ 450uA COLLECTOR CURRENT hFE Static Characteristic 200 Ta=25℃ 100uA IB=50uA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VBEsat BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 1200 —— VCE 100 5 IC Ta=25℃ 600 Ta=100℃ 400 100 COLLECTOR CURRENT IC 3000 —— IC 1000 1000 IC —— 3000 (mA) IC 100 Ta=100℃ Ta=25℃ 10 β=20 β=20 10 100 VCEsat 1000 800 1 10 COLLECTOR CURRENT 1000 200 0.1 1 (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 0 1 0.1 0.3 3000 1 10 100 COLLECTOR CURRENT (mA) VBE Cob/ Cib 500 —— IC 1000 3000 (mA) VCB/ VEB VCE=2V f=1MHz IE=0/IC=0 1000 (pF) (mA) Ta=25℃ IC Ta=100℃ COLLCETOR CURRENT C 100 Cib CAPACITANCE 100 10 Ta=25℃ Cob 1 0.1 0 200 400 600 BASE-EMMITER VOLTAGE fT —— VBE 10 0.1 1000 IC PC 600 COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY 1 10 REVERSE VOLTAGE (mV) (MHz) 500 800 100 VCE=2V —— V 20 (V) Ta 500 400 300 200 100 Ta=25℃ 10 2 10 COLLECTOR CURRENT www.jscj-elec.com 0 100 IC 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) Rev. - 2.2 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout 1.40 0.5 2.8 1.8 1.50 0 . 80 80 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.2 SOT-89-3L Tape and Reel www.jscj-elec.com 4 Rev. - 2.2