2SD596

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR (NPN) FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 700 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W -55～+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Min Typ Max Unit 30 V IC= 1mA, IB=0 25 V V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=30V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA IE=0 hFE(1)* VCE= 1V, IC= 100mA 110 hFE(2)* VCE=1V, IC= 700mA 50 Collector-emitter saturation voltage VCE(sat) * IC=700mA, IB=70mA Base-emitter voltage VBE * VCE=6V, IC=10mA 0.6 VCE=6V, IC= 10mA 170 400 DC current gain fT Transition frequency VCB=6V,IE=0,f=10MHZ Cob Collector Output Capacitance 0.6 V 0.7 V MHz 12 pF * Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. CLASSIFICATION OF hFE(1) Marking Range www.jscj-elec.com DV1 DV2 DV3 DV4 DV5 110-180 135-220 170-270 200-320 250-400 1 Rev. - 2.0 Typical Characteristics Static Characteristic 180 450uA 500 DC CURRENT GAIN 400uA 350uA 100 300uA 80 250uA 200uA 60 40 COMMON EMITTER VCE= 1V 550 hFE (mA) IC 120 COLLECTOR CURRENT 140 COMMON EMITTER Ta=25℃ 500uA 160 hFE —— IC 600 o Ta=100 C 450 400 350 300 250 o Ta=25 C 200 150uA 150 100uA 100 20 50 IB=50uA 0 0.0 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCE 2.5 1 VBEsat —— IC 1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 1.0 Ta=25℃ 0.6 0.4 Ta=100℃ 0.2 1 10 100 COLLECTOR CURRENT fT —— IC IC 250 200 150 100 Ta=100℃ Ta=25℃ 1 10 Cob / Cib IC —— 700 100 COLLECTOR CURRENT IC (mA) VCB / VEB COMMON EMITTER VCE=6V 250 700 (mA) β=10 (mA) f=1MHz IE=0 / IC=0 o Ta=25 C o Ta=25 C (pF) 100 Cib C 200 CAPACITANCE TRANSITION FREQUENCY 100 300 0 0.1 700 fT (MHz) 300 150 100 10 Cob 50 0 1 10 1 0.1 100 COLLECTOR CURRENT IC 1 10 REVERSE VOLTAGE (mA) IC —— VBE Pc 250 COLLECTOR POWER DISSIPATION Pc (mW) 700 IC (mA) IC 50 0.0 0.1 100 o COLLECTOR CURRENT VCEsat —— 350 β=10 0.8 10 COLLECTOR CURRENT (V) Ta=100 C 10 Ta=25℃ 1 —— V 20 (V) Ta 200 150 100 50 COMMON EMITTER VCE=6V 0.1 0.2 0 0.3 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE www.jscj-elec.com 0.8 0.9 1.0 0 25 50 75 AMBIENT TEMPERATURE VBE(V) 2 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-23 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0