2SD667

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-92L Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB647/A 2. COLLECTOR 3. BASE   D667 'HYLFHFRGH Solid dot = Green molding compound device, if none, the normal device ;;; &RGH  D667A 'HYLFHFRGH Solid dot = Green molding compound device, if none, the normal device ;;; &RGH D667 z D667A z Equivalent Circuit ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2SD667 TO-92L Bulk 500pcs/Bag 2SD667-TA TO-92L Tape 2000pcs/Box 2SD667A TO-92L Bulk 500pcs/Bag 2SD667A-TA TO-92L Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage Value Unit 120 V 2SD667 80 2SD667A 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 900 mW Thermal Resistance Junction to Ambient 139 ℃/W RθJA TJ,Tstg www.jscj-elec.com JOperation Junction and Storage Temperature Range -55-150 1 ℃ Rev. - 2.0  Ta =25 Я unless otherwise specified Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 Min Typ Max Unit 120 V 2SD667 80 V 2SD667A 100 V 5 V Collector cut-off current ICBO VCB=100V,IE=0 10 μA Emitter cut-off current IEBO VEB=4V,IC=0 10 μA hFE(1) VCE=5V,IC=150mA hFE(2) VCE=5V,IC=500mA DC current gain Collector-emitter saturation voltage VCE(sat) 2SD667 60 320 2SD667A 60 320 30 IC=500mA,IB=50mA 1 V 1.5 V Base-emitter voltage VBE VCE=5V,IC=150mA Transition frequency fT VCE=5V,IC=150mA 140 MHz VCB=10V,IE=0,f=1MHz 12 pF Collector output capacitance CLASSIFICATION OF Cob hFE(1) B C D 2SD667 60-120 100-200 160-320 2SD667A 60-120 100-200 160-320 Rank Range www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Static Characteristic 300 1.0mA (mA) o Ta=100 C hFE 0.8mA 0.7mA 200 DC CURRENT GAIN IC VCE= 5V COMMON EMITTER Ta=25℃ 0.9mA COLLECTOR CURRENT hFE —— IC 1000 0.6mA 0.5mA 0.4mA 100 o Ta=25 C 100 0.3mA 0.2mA IB=0.1mA 0 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE 12 1 VBEsat —— IC 1000 VCEsat —— 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT (V) 800 Ta=25℃ 600 400 Ta=100℃ 100 IC 1000 (mA) IC β=10 150 100 Ta=100℃ 50 200 Ta=25℃ 0 0.1 1 10 100 COLLECTOR CURRENT fT —— 1000 10 100 COLLECTOR CURRENT IC Cob / Cib 1000 —— IC 1000 (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 200 C 150 CAPACITANCE TRANSITION FREQUENCY 1 (mA) fT (MHz) 250 IC 0 0.1 100 100 Cib Cob 10 50 VCE=5V o Ta=25 C 0 0 20 40 60 COLLECTOR CURRENT VBE —— 80 IC 1 0.1 100 1 10 REVERSE VOLTAGE (mA) IC 1000 Pc 1200 —— V 20 (V) Ta 100 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT IC (mA) VCE=5V o Ta=100 C 10 Ta=25℃ 1 1000 800 600 400 200 0.1 200 0 400 600 BASE-EMITTER VOLTAGE www.jscj-elec.com 800 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 3 100 Ta 125 150 (℃ ) Rev. - 2.0 Dimensions In Millimeters Min. Max. 3.750 4.050 1.280 1.580 0.380 0.550 0.620 0.780 0.350 0.450 4.750 5.050 4.000 7.850 8.150 1.270 TYP. 2.440 2.640 13.800 14.200 1.600 0.000 0.300 Symbol A A1 b b1 c D D1 E e e1 L Φ h Dimensions In Inches Min. Max. 0.148 0.159 0.050 0.062 0.015 0.022 0.024 0.031 0.014 0.018 0.187 0.199 0.157 0.309 0.321 0.050 TYP. 0.096 0.104 0.543 0.559 0.063 0.000 0.012 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 www.jscj-elec.com 5 Rev. - 2.0