2SD667

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC(T 2SD667,2SD667A TO-92L TRANSISTOR (NPN) FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol 2. COLLECTOR Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage Value Unit 120 V 2SD667 80 2SD667A 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A Collector Power Dissipation 900 mW Thermal Resistance Junction to Ambient 139 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ PC RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 Min Typ Max Unit 120 V 2SD667 80 V 2SD667A 100 V 5 V Collector cut-off current ICBO VCB=100V,IE=0 10 μA Emitter cut-off current IEBO VEB=4V,IC=0 10 μA hFE(1) VCE=5V,IC=150mA hFE(2) VCE=5V,IC=500mA DC current gain Collector-emitter saturation voltage VCE(sat) 2SD667 60 320 2SD667A 60 320 30 IC=500mA,IB=50mA 1 V 1.5 V Base-emitter voltage VBE VCE=5V,IC=150mA Transition frequency fT VCE=5V,IC=150mA 140 MHz VCB=10V,IE=0,f=1MHz 12 pF Collector output capacitance CLASSIFICATION OF Cob hFE(1) B C D 2SD667 60-120 100-200 160-320 2SD667A 60-120 100-200 160-320 Rank Range www.cj-elec.com 1 D,Oct,2014 Typical Characteristics Static Characteristic 300 1.0mA (mA) o Ta=100 C hFE 0.8mA 0.7mA 200 DC CURRENT GAIN IC VCE= 5V COMMON EMITTER Ta=25℃ 0.9mA COLLECTOR CURRENT hFE —— IC 1000 0.6mA 0.5mA 0.4mA 100 o Ta=25 C 100 0.3mA 0.2mA IB=0.1mA 0 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE 12 1 VBEsat —— IC 1000 VCEsat —— 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT (V) 800 Ta=25℃ 600 400 Ta=100℃ 100 IC 1000 (mA) IC β=10 150 100 Ta=100℃ 50 200 Ta=25℃ 0 0.1 1 10 100 COLLECTOR CURRENT fT —— 1000 10 100 COLLECTOR CURRENT IC Cob / Cib 1000 —— IC 1000 (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 200 C 150 CAPACITANCE TRANSITION FREQUENCY 1 (mA) fT (MHz) 250 IC 0 0.1 100 100 Cib Cob 10 50 VCE=5V o Ta=25 C 0 0 20 40 60 COLLECTOR CURRENT VBE —— 80 IC 1 0.1 100 1 10 REVERSE VOLTAGE (mA) IC 1000 Pc 1200 —— V 20 (V) Ta 100 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT IC (mA) VCE=5V o Ta=100 C 10 Ta=25℃ 1 1000 800 600 400 200 0.1 200 0 400 600 BASE-EMITTER VOLTAGE www.cj-elec.com 800 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 2 100 Ta 125 150 (℃ ) D,Oct,2014 Symbol A A1 b b1 c D D1 E e e1 L Φ h www.cj-elec.com 3 Dimensions In Millimeters Min Max 3.700 4.100 1.280 1.580 0.350 0.550 0.600 0.800 0.350 0.450 4.700 5.100 4.000 7.800 8.200 1.270 TYP 2.440 2.640 13.800 14.200 1.600 0.000 0.300 Dimensions In Inches Min Max 0.146 0.161 0.050 0.062 0.014 0.022 0.024 0.031 0.014 0.018 0.185 0.201 0.157 0.307 0.323 0.050 TYP 0.096 0.104 0.543 0.559 0.063 0.000 0.012 D,Oct,2014 www.cj-elec.com 4 D,Oct,2014