2SK1658

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFET V(BR)DSS ID RDS(on)MAX SOT-323 10Ω@4V 30 V 100mA 15Ω@2.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment APPLICATION Interfacing , Switching z Easily designed drive circuits Easy to parallel z z Equivalent Circuit MARKING MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Value Unit Drain-Source voltage 30 V VGS Gate-Source Voltage ±7 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature RθJA Thermal Resistance from Junction to Ambient Symbol Parameter VDS www.jscj-elec.com 1 -55-150 ℃ 625 ℃ /W Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 µA Gate –Source leakage current IGSS VGS =±3V, VDS = 0V ±1 µA Gate Cut-off Voltage VGS(off) VDS = 3V, ID =1µA 1.5 V Drain-Source On-Resistance RDS(on) Forward Transconductance gFS 30 V 0.9 VGS = 4V, ID =10mA 5 10 Ω VGS =2.5V,ID =10mA 7 15 Ω VDS =3V, ID = 10mA mS 20 Dynamic Characteristics* Input Capacitance Ciss 15 pF Output Capacitance Coss 10 pF Reverse Transfer Capacitance Crss 1.5 pF td(on) 50 ns VGS =3V, VDD =3V, 23 ns ID =10mA, Rg=10Ω, RL=300Ω 34 ns 43 ns VDS =3V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time tf *These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics 0.20 Ta=25℃ VGS=3.0V 4.0V Pulsed 200 100 3.5V 0.15 ID VGS=2.5V 0.10 0.05 DRAIN CURRENT DRAIN CURRENT ID (A) (mA) 30 VGS=2.0V 10 3 1 VDS=3V 0.3 Ta=25℃ VGS=1.5V 0.00 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) 60 VDS Pulsed 0.1 5 0 1 2 GATE TO SOURCE VOLTAGE (V) 3 VGS RDS(ON) —— VGS —— ID 15 Ta=25℃ Ta=25℃ ( Ω) Pulsed 10 ON-RESISTANCE RDS(ON) 40 RDS(ON) ( Ω) Pulsed ON-RESISTANCE 4 (V) 20 ID=100mA 5 ID=50mA VGS= 2.5V 0 VGS= 4V 1 10 3 100 30 DRAIN CURRENT ID 0 200 (mA) 0 5 10 GATE TO SOURCE VOLTAGE 15 VGS 20 (V) IS —— VSD 200 100 VGS=0V Ta=25℃ SOURCE CURRENT IS (mA) Pulsed 30 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 0.8 1.0 VSD (V) 3 Rev. - 1.0 6273DFNDJH2XWOLQH'LPHQVLRQV Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1  Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 6277DSHDQG5HHO SOT-323 Reel D I G W2 H 3000 2500 2000 1500 1000 D2 D1 500 W1 www.jscj-elec.com 5 Rev. - 1.0