2SK3018

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits z Easy to parallel 1. GATE 2. SOURCE 3. DRAIN Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Value Units Symbol Parameter VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature RθJA Thermal Resistance, Junction-to-Ambient -55~+150 357 V ℃ ℃ /W MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 0.2 µA Gate –Source leakage current IGSS VGS =±20V, VDS = 0V ±2 µA Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 1.5 V Drain-Source On-Resistance RDS(on) VGS = 4V, ID =10mA 8 Ω VGS =2.5V,ID =1mA 13 Ω Forward Transconductance gFS VDS =3V, ID = 10mA 30 V 0.8 mS 20 Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω, 80 ns 80 ns VDS =5V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time * These parameters have no way to verify. tf B,Mar,2014 2SK3018 Typical Characteristics Output Characteristics 0.20 4.0V Ta=25℃ VGS=3.0V 3.5V Pulsed 100 0.15 (mA) 30 ID VGS=2.5V 0.10 0.05 DRAIN CURRENT DRAIN CURRENT ID (A) Transfer Characteristics 200 VGS=2.0V 10 3 1 VDS=3V 0.3 Ta=25℃ VGS=1.5V 0.00 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS Pulsed 0.1 5 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS RDS(ON) —— VGS RDS(ON) —— ID 60 15 Ta=25℃ Ta=25℃ Pulsed ( Ω) 10 RDS(ON) 40 ON-RESISTANCE RDS(ON) ( Ω) Pulsed ON-RESISTANCE 4 (V) 20 VGS=2.5V 0 10 100 IS 100 30 DRAIN CURRENT 200 ID=50mA VGS=4V 3 1 —— ID ID=100mA 5 200 (mA) 0 0 5 10 GATE TO SOURCE VOLTAGE 15 VGS 20 (V) VSD VGS=0V Ta=25℃ SOURCE CURRENT IS (mA) Pulsed 30 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 1.0 VSD (V) B,Mar,2014