3DD13003

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR (NPN) TO-126 FEATURES z Power switching applications 1 . BASE 2. COLLECTOR 3. EMITTER  13003 Equivalent Circuit 13003 JCET Logo 13003 'HYLFHFoGH Solid dot = Green molding compound device, if none, the normal device ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13003 TO-126 Bulk 200pcs/Bag 3DD13003-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Symbol Parameter IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg www.cj-elec.com Storage Temperature ℃ -55~150 1 D,Aug,2017  Ta =25 Я unless otherwise specified symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =5mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=2mA, IC=0 9 V Collector cut-off current ICBO VCB=700V,IE=0 1 mA Collector cut-off current ICEO VCE=400V,IB=0 0.5 mA Emitter cut-off current IEBO VEB=9V, IC=0 1 mA hFE1 VCE=5V, IC= 0.5 A 8 hFE2 VCE=5V, IC= 1.5A 5 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=0.25A 0.6 V Base-emitter saturation voltage VBE(sat) IC=1A,IB=0.25A 1.2 V DC current gain Transition frequency fT VCE=10V,Ic=100mA, f =1MHz Fall time tf IC=1A, IB1=-IB2=0.2A, VCC=100V Storage time tS IC=250mA (UI9600) 40 5 MHz 0.5 µs 2 4 μs 30-35 35-40 CLASSIFICATION OF hFE(1) Range 10-15 15-20 20-25 25-30 CLASSIFICATION OF tS Rank A1 A2 B1 B2 Range 2-2.5 (μs ) 2.5-3(μs ) 3-3.5(μs ) 3.5-4 (μs ) www.cj-elec.com 2 D,Aug,2017 Typical Characteristics hFE Static Characteristic IC VCE=5V COMMON EMITTER Ta=25℃ IB=20mA IB=18mA IB=16mA (mA) 400 Ta=100℃ 30 IC hFE IB=14mA DC CURRENT GAIN IB=12mA 300 COLLECTOR CURRENT —— 100 500 IB=10mA IB=8mA 200 IB=6mA 10 3 IB=4mA 100 Ta=25℃ IB=2mA 1 0.01 0 0 4 2 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 10 IC VBEsat —— IC 1 2 (A) IC 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0.3 COLLECTOR CURRENT 1 0.3 Ta=100℃ 0.1 Ta=25℃ 0.03 0.01 0.02 0.1 0.03 (V) β=4 0.05 0.3 0.1 COLLECTOR CURRENT Cob/ Cib —— 1 IC 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 0.02 3 β=4 0.05 (A) 0.1 1 0.3 COLLECTOR CURRENT VCB/ VEB PC 1000 —— IC 3 (A) Ta 2.0 f=1MHz IE=0/IC=0 Cib Ta=25℃ CAPACITANCE C (pF) COLLECTOR POWER DISSIPATION PC (W) 300 100 Cob 30 10 0.1 1.0 0.5 0.0 0.3 1 REVERSE VOLTAGE www.cj-elec.com 1.5 10 3 VR 0 20 25 50 75 AMBIENT TEMPERATURE (V) 3 100 Ta 125 150 (℃ ) D,Aug,2017 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 D,Aug,2017