3DD13003B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER FEATURES 2. COLLECTOR · power switching applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 100 µA Collector cut-off current ICEO VCE= 400V, IB=0 50 µA Emitter cut-off current IEBO VEB= 7V, IC=0 10 µA DC current gain hFE VCE= 10V, IC= 0.4 A Collector-emitter saturation voltage Base-emitter saturation voltage 20 40 VCE(sat)1 IC=1.5A,IB= 0.5A 3 V VCE(sat)2 IC=0.5A, IB= 0.1A 0.8 V VBE(sat) IC=0.5A, IB=0.1A 1 V Transition Frequency fT VCE=10V,IC=100mA, f =1MHz Fall time tf IC=1A Storage time ts IB1=-IB2=0.2A 4 MHz 0.7 µs 4 µs CLASSIFICATION OF hFE Rank Range 20-25 25-30 30-35 35-40 C,Feb,2013 Typical Characteristics 3DD13003B Static Characteristic hFE 800 COLLECTOR CURRENT hFE Ta=100℃ 500 20mA 400 16mA 300 12mA 200 8mA DC CURRENT GAIN 600 Ta=25℃ 10 IB=4mA 100 0 1 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 12 14 1 Ic VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=3,Ta=25℃ β=5,Ta=25℃ 600 β=3,Ta=100 ℃ 400 β=5,Ta=100 ℃ 200 0.1 1 10 IC —— IC β=5,Ta=100 ℃ 100 β=3,Ta=25℃ β=3,Ta=100 ℃ 1 (mA) 10 100 COLLECTOR CURRENT IC — — VBE fT 5 (mA) (MHz) COMMON EMITTER VCE=10V (mA) IC β=5,Ta=25℃ 10 0.1 1000 1500 100 COLLECTOR CURREMT 1500 1000 1000 1500 100 1000 1000 800 10 COLLECTOR CURRENT VCE (V) 1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC COMMON EMITTER VCE= 10V 40mA 36mA 32mA 28mA 24mA IC (mA) 700 —— 100 COMMON EMITTER Ta=25℃ —— IC 1000 1500 (mA) IC COMMON EMITTER VCE=10V Ta=25℃ 4 fT TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC 100 1 0.1 200 400 600 800 3 2 1 0 10 1000 20 40 BASE-EMMITER VOLTAGE VBE (mV) Cob/Cib —— VCB/VEB PC Cib COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IC=0/IE=0 1000 Ta=25 ℃ (pF) CT CAPACITANCE 80 —— 100 IC 120 140 (mA) Ta 1200 2000 100 Cob 10 1 0.1 60 COLLECTOR CURRENT 1 REVERSE VOLTAGE 10 V (V) 30 900 600 300 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Feb,2013