8050S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors JC(T TO-92 8050S TRANSISTOR (NPN) FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V 5 V 0.5 A 0.625 W Junction Temperature 150 ℃ Storage Temperature -55-150 ℃ VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Tstg ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 50mA 85 hFE(2) VCE= 1V, IC= 500mA 50 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V CLASSIFICATION OF Rank Range www.cj-elec.com VCE= 6V, IC=20mA fT Transition frequency MHz 150 f =30MHz hFE(1) B C D D3 85-160 120-200 160-300 300-400 1 A,Jun,2014 C,Dec,2015 Typical Characteristics Static Characteristic IC COMMON EMITTER VCE=1V 420uA DC CURRENT GAIN hFE 80 —— COMMON EMITTER Ta=25℃ 480uA COLLECTOR CURRENT IC (mA) hFE 1000 100 360uA 60 300uA 240uA 40 180uA Ta=100℃ Ta=25℃ 100 120uA 20 IB=60uA 10 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 3 1 30 10 IC VBEsat 2000 500 100 COLLECTOR CURRENT (V) IC (mA) IC —— 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 500 VCE 20 100 Ta=100℃ Ta=25℃ 30 1000 Ta=25℃ Ta=100℃ β=10 β=10 10 3 1 30 10 COLLECTOR CURRENT IC 100 —— IC 100 500 100 1 (mA) TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=1V 10 Ta=100℃ 3 Ta=25℃ 0.3 0.4 0.6 0.8 Cob/ Cib —— 100 2 COLLECTOR POWER DISSIPATION PC (mW) Ta=25℃ CAPACITANCE C (pF) Cob 3 1 0.1 0.3 1 REVERSE VOLTAGE www.cj-elec.com 3 V 30 10 PC —— 750 30 10 IC COLLECTOR CURRENT f=1MHz IE=0/ IC=0 10 500 (mA) 300 1.0 VCB/ VEB Cib —— IC COMMON EMITTER VCE=6V BASE-EMMITER VOLTAGE VBE (V) 100 100 Ta=25℃ 10 0.2 fT 1000 30 0.1 0.0 30 10 COLLECTOR CURRENT VBE 1 3 IC 100 (mA) Ta 625 500 375 250 125 0 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) A,Jun,2014 C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 C,Dec,2015